SPD04N8

SPD04N80C3ATMA1 vs SPD04N80C3BTMA1

 
PartNumberSPD04N80C3ATMA1SPD04N80C3BTMA1
DescriptionMOSFET LOW POWER_LEGACYMOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V
Id Continuous Drain Current4 A4 A
Rds On Drain Source Resistance1.1 Ohms1.1 Ohms
Vgs th Gate Source Threshold Voltage2.1 V2.1 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge31 nC31 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation63 W63 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameCoolMOS-
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesCoolMOS C3XPD04N80
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Fall Time12 ns12 ns
Product TypeMOSFETMOSFET
Rise Time15 ns15 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time72 ns72 ns
Typical Turn On Delay Time25 ns25 ns
Part # AliasesSP001117768 SPD04N80C3SP000315410 SPD04N80C3 SPD04N80C3XT
Unit Weight0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
SPD04N80C3ATMA1 MOSFET LOW POWER_LEGACY
SPD04N80C3ATMA1 MOSFET N-CH 800V 4A 3TO252
SPD04N80C3BTMA1 MOSFET N-CH 800V 4A TO-252
Infineon Technologies
Infineon Technologies
SPD04N80C3BTMA1 MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3
SPD04N80C3 IGBT Transistors MOSFET N-Ch 800V 4A DPAK-2 CoolMOS C3
SPD04N80C3,D04N80C3, Neu und Original
SPD04N80C3/SL4N80CD Neu und Original
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