PSMN7R8-120ESQ

Mfr. #:: PSMN7R8-120ESQ
Hersteller:: Nexperia
Beschreibung:: Darlington Transistors MOSFET N-channel 120 V 7.9 mo FET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: PSMN7R8-120ESQ Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: PSMN7R8-120ESQ Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: NXP Semiconductors

Produktkategorie: Transistoren - FETs, MOSFETs - Single

Verpackung: Rohr

Gewichtseinheit: 0.084199 oz

Montageart: Durchgangsloch

Paket-Koffer: I2PAK-3

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 349 W

Maximale-Betriebstemperatur: + 175 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 60.8 ns

Anstiegszeit: 55.3 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 70 A

Vds-Drain-Source-Breakdown-Voltage: 120 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Widerstand: 6.72 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 151.8 ns

Typische-Einschaltverzögerungszeit: 45.5 ns

Qg-Gate-Ladung: 167 nC

Tags: PSMN7R8-12, PSMN7R8, PSMN7, PSMN, PSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PSMN7R8-120ESQ Mehr Informationen

PSMN N-Channel MOSFETs: Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
PSMN7R8-120ESQ DISTI # 1727-1509-ND	Nexperia	MOSFET N-CH 120V 70A I2PAK RoHS: Compliant Min Qty: 5000 Container: Tube	Temporarily Out of Stock	5000:$1.3913
PSMN7R8-120ESQ DISTI # PSMN7R8-120ESQ	NXP Semiconductors	Trans MOSFET N-CH 120V 70A 3-Pin SOT-226 Rail - Rail/Tube (Alt: PSMN7R8-120ESQ) RoHS: Compliant Min Qty: 5000 Container: Tube	Americas - 0	5000:$1.1900 7000:$1.1900 12000:$1.1900 25000:$1.1900 50000:$1.0900
PSMN7R8-120ESQ	NXP Semiconductors	Now Nexperia PSMN7R8-120ESQ - Power Field-Effect Transistor, 70A I(D), 120V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	430	1000:$1.2900 500:$1.3600 100:$1.4100 25:$1.4700 1:$1.5900
PSMN7R8-120ESQ DISTI # 771-PSMN7R8-120ESQ	Nexperia	MOSFET N-channel 120 V 7.9 mo FET RoHS: Compliant	0	1:$2.8700 10:$2.4400 100:$1.9500 500:$1.7100 1000:$1.4200 2500:$1.3200 5000:$1.2700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: PSMN7R8-100PSEQ OMO.#: OMO-PSMN7R8-100PSEQ	MOSFET N-channel 100V 7.8mO std level MOSFET
	Mfr.#: PSMN7R8-120PSQ OMO.#: OMO-PSMN7R8-120PSQ	MOSFET N-channel 120V 7.9mo FET
	Mfr.#: PSMN7R8-120ESQ OMO.#: OMO-PSMN7R8-120ESQ	MOSFET N-channel 120 V 7.9 mo FET
	Mfr.#: PSMN7R8-120ES OMO.#: OMO-PSMN7R8-120ES-1190	Neu und Original
	Mfr.#: PSMN7R8-120PS OMO.#: OMO-PSMN7R8-120PS-1190	Neu und Original
	Mfr.#: PSMN7R8-120PS127 OMO.#: OMO-PSMN7R8-120PS127-1190	MOSFET N Channel Enhancement 120V 70A 3-Pin TO-220AB Through Hole - Bulk (Alt: PSMN7R8-120PS127)
	Mfr.#: PSMN7R8-120PSQ OMO.#: OMO-PSMN7R8-120PSQ-NEXPERIA	MOSFET N-CH 120V 70A TO-220AB
	Mfr.#: PSMN7R8-120XS OMO.#: OMO-PSMN7R8-120XS-1190	Neu und Original
	Mfr.#: PSMN7R8-120ESQ OMO.#: OMO-PSMN7R8-120ESQ-NEXPERIA	Darlington Transistors MOSFET N-channel 120 V 7.9 mo FET
	Mfr.#: PSMN7R8-100PSEQ OMO.#: OMO-PSMN7R8-100PSEQ-NEXPERIA	MOSFET N-CH 100V SIL3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von PSMN7R8-120ESQ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,64 $~~; ~~1,64 $~~

10: ~~1,55 $~~; ~~15,53 $~~

100: ~~1,47 $~~; ~~147,15 $~~

500: ~~1,39 $~~; ~~694,90 $~~

1000: ~~1,31 $~~; ~~1 308,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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PSMN7R8-120ESQ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes