PartNumber | PSMN7R8-120PSQ | PSMN7R8-120ESQ |
Description | MOSFET N-channel 120V 7.9mo FET | MOSFET N-channel 120 V 7.9 mo FET |
Manufacturer | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-262-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 120 V | 120 V |
Id Continuous Drain Current | 70 A | 70 A |
Rds On Drain Source Resistance | 6.72 mOhms | 6.72 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 167 nC | 167 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 349 W | 349 W |
Configuration | Single | Single |
Packaging | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Nexperia | Nexperia |
Fall Time | 60.8 ns | 60.8 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 55.3 ns | 55.3 ns |
Factory Pack Quantity | 50 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 151.8 ns | 151.8 ns |
Typical Turn On Delay Time | 45.5 ns | 45.5 ns |
Unit Weight | 0.211644 oz | 0.084199 oz |