QPD0050TR7

QPD0050TR7
Mfr. #:
QPD0050TR7
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-3.6GHz GaN 75W 48V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
QPD0050TR7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
QPD0050TR7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Qorvo
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Technologie:
GaN
Gewinnen:
19.4 dB
Ausgangsleistung:
75 W
Minimale Betriebstemperatur:
- 40 C
Montageart:
SMD/SMT
Paket / Koffer:
DFN-6
Verpackung:
Spule
Anwendung:
Microcell-Basisstation, W-CDMA / LTE
Aufbau:
Single
Arbeitsfrequenz:
DC to 3.6 GHz
Serie:
QPD
Marke:
Qorvo
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
250
Unterkategorie:
Transistoren
Teil # Aliase:
1132691
Tags
QPD005, QPD0, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von QPD0050TR7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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