 |  |  | |
| PartNumber | QPD0050SR | QPD0030 | QPD0050TR7 |
| Description | RF Amplifier 50W GaN25HV | RF JFET Transistors DC-4GHz 45W GaN 48V | RF JFET Transistors DC-3.6GHz GaN 75W 48V |
| Manufacturer | Qorvo | Qorvo | Qorvo |
| Product Category | RF Amplifier | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN-6 | QFN-20 | DFN-6 |
| Type | Power Amplifier | - | - |
| Technology | GaN | GaN | GaN |
| Operating Frequency | DC to 3.6 GHz | DC to 4 GHz | DC to 3.6 GHz |
| Gain | 22.5 dB | 21.7 dB | 19.4 dB |
| Operating Supply Voltage | 48 V | - | - |
| Packaging | Reel | Reel | Reel |
| Brand | Qorvo | Qorvo | Qorvo |
| Moisture Sensitive | Yes | - | Yes |
| Product Type | RF Amplifier | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 100 | 250 | 250 |
| Subcategory | Wireless & RF Integrated Circuits | Transistors | Transistors |
| Vds Drain Source Breakdown Voltage | - | - | - |
| Vgs Gate Source Breakdown Voltage | - | - | - |
| Id Continuous Drain Current | - | - | - |
| Output Power | - | 45 W | 75 W |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Maximum Operating Temperature | - | - | - |
| Pd Power Dissipation | - | 45 W | - |
| Application | - | Microcell Base Station, W-CDMA / LTE | Microcell Base Station, W-CDMA / LTE |
| Configuration | - | Single | Single |
| Series | - | QPD | QPD |
| Forward Transconductance Min | - | - | - |
| Part # Aliases | - | 1132528 | 1132691 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Qorvo |
QPD0050SR | RF Amplifier 50W GaN25HV | |
| QPD0060SR | RF Amplifier 100W GaN25HV | ||
| QPD0060TR7 | RF Amplifier 100W GaN25HV | ||
| QPD0030 | RF JFET Transistors DC-4GHz 45W GaN 48V | ||
| QPD0060 | RF JFET Transistors DC-3.6GHz GaN 90W 48V | ||
| QPD0050TR7 | RF JFET Transistors DC-3.6GHz GaN 75W 48V | ||
| QPD0030 | RF JFET Transistors DC-4GHz 45W GaN 48V | ||
| QPD0050 | Neu und Original |