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FDS3512

FDS3512
Mfr. #:
FDS3512
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS3512 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
70 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
FDS3512
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
14 S
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
FDS3512_NL
Gewichtseinheit:
0.004586 oz
Tags
FDS351, FDS35, FDS3, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4A I(D),SO
***Semiconductor
N-Channel PowerTrench® MOSFET, 80V, 4.0A, 70mΩ
***p One Stop Global
Trans MOSFET N-CH 80V 4A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 80V 4A 8SOIC
***et
80V/20V, 70/80MO, NCH, SINGLE, SO8
***ser
MOSFETs SO-8
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Teil # Mfg. Beschreibung Aktie Preis
FDS3512
DISTI # V36:1790_06300814		ON Semiconductor80V N-CHANNEL POWERTRENCH&#1740
  • 2500:$1.0280
FDS3512
DISTI # FDS3512CT-ND		ON SemiconductorMOSFET N-CH 80V 4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		346In Stock
  • 1000:$0.8465
  • 500:$1.0216
  • 100:$1.2435
  • 10:$1.5470
  • 1:$1.7200
FDS3512
DISTI # FDS3512DKR-ND		ON SemiconductorMOSFET N-CH 80V 4A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		346In Stock
  • 1000:$0.8465
  • 500:$1.0216
  • 100:$1.2435
  • 10:$1.5470
  • 1:$1.7200
FDS3512
DISTI # FDS3512TR-ND		ON SemiconductorMOSFET N-CH 80V 4A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.7179
  • 5000:$0.7368
  • 2500:$0.7652
FDS3512
DISTI # FDS3512		ON SemiconductorTrans MOSFET N-CH 80V 4A 8-Pin SOIC N T/R (Alt: FDS3512)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5939
  • 15000:€0.6399
  • 10000:€0.6939
  • 5000:€0.7569
  • 2500:€0.9249
FDS3512
DISTI # FDS3512		ON SemiconductorTrans MOSFET N-CH 80V 4A 8-Pin SOIC N T/R - Bulk (Alt: FDS3512)
RoHS: Compliant
Min Qty: 256
Container: Bulk		Americas - 0
  • 256:$1.1900
  • 512:$1.1900
  • 768:$1.1900
  • 1280:$1.1900
  • 2560:$1.1900
FDS3512
DISTI # FDS3512		ON SemiconductorTrans MOSFET N-CH 80V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3512)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$1.0889
  • 15000:$1.1169
  • 10000:$1.1309
  • 5000:$1.1459
  • 2500:$1.1529
FDS3512
DISTI # 82C2538		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4A I(D),SO ROHS COMPLIANT: YES0
  • 30000:$0.8460
  • 18000:$0.8800
  • 12000:$0.9140
  • 6000:$1.0200
  • 3000:$1.0700
  • 1:$1.1400
FDS3512
DISTI # 512-FDS3512		ON SemiconductorMOSFET SO-8
RoHS: Compliant		1609
  • 1:$1.6500
  • 10:$1.4500
  • 100:$1.2000
  • 500:$0.9720
  • 1000:$0.8060
  • 2500:$0.7310
  • 5000:$0.7080
  • 10000:$0.6960
FDS3512_Q
DISTI # 512-FDS3512_Q		ON SemiconductorMOSFET SO-8
RoHS: Not compliant		0
    FDS3512Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 4A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		37368
    • 1000:$1.2900
    • 500:$1.3600
    • 100:$1.4100
    • 25:$1.4700
    • 1:$1.5900
    FDS3512Fairchild Semiconductor Corporation 14292
      FDS3512Fairchild Semiconductor Corporation4000MA, 80V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET68
      • 49:$1.1700
      • 14:$1.5600
      • 1:$2.3400
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von FDS3512 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,65 $
      1,65 $
      10
      1,45 $
      14,50 $
      100
      1,20 $
      120,00 $
      500
      0,97 $
      486,00 $
      1000
      0,81 $
      806,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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