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FDP3652

FDP3652
Mfr. #:
FDP3652
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 100V 61A TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDP3652 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Teil-Aliasnamen
FDP3652_NL
Gewichtseinheit
0.063493 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
150 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
45 ns
Anstiegszeit
85 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
61 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
14 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
26 ns
Typische-Einschaltverzögerungszeit
12 ns
Kanal-Modus
Erweiterung
Tags
FDP3652, FDP365, FDP36, FDP3, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube
***p One Stop Global
Trans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB
***Semiconductor
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ
***inecomponents.com
TO-220AB, SINGLE, N-CH, 100V, 16MOHM PWR ULTRAFET TRENCH MOS
***Components
MOSFET N-CHANNEL 100V 9A TO220AB
*** Source Electronics
MOSFET N-CH 100V 61A TO-220AB
***eco
FDP3652.,3 LD PLASTIC W/EXPOSE D HEATSNK <AZ
***ser
MOSFETs 100V, 61a, 0.016 Ohm
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:61A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Avalanche Single Pulse Energy Eas:182mJ; Current, Idm Pulse:70A; Lead Spacing:2.54mm; No. of Pins:3; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation:150W; Power, Pd:150W; Power, Ptot:150W; Resistance, Rds on @ Vgs = 10V:0.014ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, trr Typ:62ns; Transistors, No. of:1; Typ Capacitance Ciss:2880pF; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Teil # Mfg. Beschreibung Aktie Preis
FDP3652
DISTI # V36:1790_06359472		ON SemiconductorFET 100V 16.0 MOHM TO22012113
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 1:$1.6158
FDP3652
DISTI # V79:2366_18816080		ON SemiconductorFET 100V 16.0 MOHM TO220222
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 1:$1.6158
FDP3652
DISTI # FDP3652-ND		ON SemiconductorMOSFET N-CH 100V 61A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk		30In Stock
  • 1000:$1.2530
  • 500:$1.5123
  • 100:$1.9444
  • 10:$2.4200
  • 1:$2.6800
FDP3652
DISTI # 26163598		ON SemiconductorFET 100V 16.0 MOHM TO22012113
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 10:$1.4022
  • 8:$1.6158
FDP3652
DISTI # 26122911		ON SemiconductorFET 100V 16.0 MOHM TO220222
  • 5000:$0.7903
  • 2500:$0.7990
  • 1000:$0.8540
  • 500:$1.0174
  • 100:$1.1278
  • 15:$1.4022
FDP3652
DISTI # 30702593		ON SemiconductorFET 100V 16.0 MOHM TO22032
  • 16:$0.6217
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP3652)
RoHS: Compliant
Min Qty: 288
Container: Bulk		Americas - 0
  • 288:$0.8099
  • 290:$0.8049
  • 578:$0.7939
  • 1440:$0.7839
  • 2880:$0.7649
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 800:$1.3662
  • 1600:$1.3136
  • 2400:$1.2650
  • 4000:$1.2198
  • 8000:$1.1778
  • 20000:$1.1385
  • 40000:$1.1198
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP3652)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.0067
  • 1600:$1.0001
  • 3200:$0.9873
  • 4800:$0.9748
  • 8000:$0.9507
FDP3652
DISTI # FDP3652		ON SemiconductorTrans MOSFET N-CH 100V 9A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP3652)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€0.9299
  • 10:€0.8269
  • 25:€0.7439
  • 50:€0.6759
  • 100:€0.6199
  • 500:€0.5719
FDP3652.
DISTI # 15AC2932		Fairchild Semiconductor CorporationTransistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:150W,No. of Pins:3Pins RoHS Compliant: Yes12
  • 8000:$0.9500
  • 4800:$0.9740
  • 3200:$0.9870
  • 1600:$1.0000
  • 1:$1.0100
FDP3652
DISTI # 512-FDP3652		ON SemiconductorMOSFET 100V 61a 0.016 Ohm
RoHS: Compliant		7
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3700
  • 1000:$1.1300
FDP3652_Q
DISTI # 512-FDP3652_Q		ON SemiconductorMOSFET 100V 61a 0.016 Ohm
RoHS: Not compliant		0
    FDP3652Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		2464
    • 1000:$1.1300
    • 500:$1.1900
    • 100:$1.2400
    • 25:$1.2900
    • 1:$1.3900
    FDP3652Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		Europe - 624
      FDP3652
      DISTI # 1017692      		ON SemiconductorMOSFET, N, TO-220
      RoHS: Compliant      		0
      • 500:$1.5800
      • 100:$1.8100
      • 10:$2.2600
      • 1:$2.6500
      Bild Teil # Beschreibung
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      FDP047AN08AO,FDP047AN08A

      Mfr.#: FDP047AN08AO,FDP047AN08A

      OMO.#: OMO-FDP047AN08AO-FDP047AN08A-1190

      		 Neu und Original
      FDP070AN06AO

      Mfr.#: FDP070AN06AO

      OMO.#: OMO-FDP070AN06AO-1190

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      FDP14AN06LA0

      Mfr.#: FDP14AN06LA0

      OMO.#: OMO-FDP14AN06LA0-ON-SEMICONDUCTOR

      		 MOSFET N-CH 60V 67A TO-220AB
      FDP3632,FDP3682,FDP3205,

      Mfr.#: FDP3632,FDP3682,FDP3205,

      OMO.#: OMO-FDP3632-FDP3682-FDP3205--1190

      		 Neu und Original
      FDP39N20

      Mfr.#: FDP39N20

      OMO.#: OMO-FDP39N20-ON-SEMICONDUCTOR

      		 MOSFET N-CH 200V 39A TO-220
      FDP7030

      Mfr.#: FDP7030

      OMO.#: OMO-FDP7030-1190

      		 Neu und Original
      FDPC3D5N025X9D

      Mfr.#: FDPC3D5N025X9D

      OMO.#: OMO-FDPC3D5N025X9D-ON-SEMICONDUCTOR

      		 MOSFET 2 N-CH 25V 74A 12-PQFN
      FDPF18N50UT

      Mfr.#: FDPF18N50UT

      OMO.#: OMO-FDPF18N50UT-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von FDP3652 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,94 $
      0,94 $
      10
      0,89 $
      8,90 $
      100
      0,84 $
      84,33 $
      500
      0,80 $
      398,25 $
      1000
      0,75 $
      749,60 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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