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TK100A08N1,S4X

TK100A08N1,S4X
Mfr. #:
TK100A08N1,S4X
Hersteller:
Toshiba
Beschreibung:
MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TK100A08N1,S4X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK100A08N1,S4X DatasheetTK100A08N1,S4X Datasheet (P4-P6)TK100A08N1,S4X Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
TK100A08N1,S4X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
130 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
45 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
DTMOSIV
Höhe:
15 mm
Länge:
10 mm
Serie:
TK100A08N1
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Toshiba
Produktart:
MOSFET
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.211644 oz
Tags
TK100A08, TK100A0, TK100A, TK100, TK10, TK1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 80V 214A 3-Pin TO-220SIS
***
MOSFET TRAN TO-220SIS 45W /1
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Teil # Mfg. Beschreibung Aktie Preis
TK100A08N1,S4X(S
DISTI # 30599766		Toshiba America Electronic ComponentsTrans MOSFET N-CH 80V 214A 3-Pin(3+Tab) TO-220SIS
RoHS: Compliant		2917
  • 800:$1.7723
  • 100:$1.8870
  • 50:$2.2058
  • 10:$2.4735
  • 9:$2.9835
TK100A08N1,S4X
DISTI # TK100A08N1S4X-ND		Toshiba America Electronic ComponentsMOSFET N-CH 80V 214A TO220SIS
RoHS: Compliant
Min Qty: 1
Container: Tube		5In Stock
  • 1000:$2.0775
  • 500:$2.4633
  • 100:$3.0420
  • 50:$3.3388
  • 1:$4.1500
TK100A08N1,S4X(S
DISTI # C1S751200910799		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220SIS
RoHS: Compliant		2917
  • 1600:$1.3500
  • 800:$1.3900
  • 100:$1.4800
  • 50:$1.7300
  • 10:$1.9400
  • 1:$2.3400
TK100A08N1,S4X
DISTI # TK100A08N1,S4X		Toshiba America Electronic ComponentsTrans MOSFET N-CH 80V 214A 3-Pin TO-220SIS - Rail/Tube (Alt: TK100A08N1,S4X)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 0
  • 50:$2.0900
  • 100:$1.8900
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.6900
TK100A08N1,S4X
DISTI # 757-TK100A08N1S4X		Toshiba America Electronic ComponentsMOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
RoHS: Compliant		58
  • 1:$3.7800
  • 10:$3.0400
  • 100:$2.7700
  • 250:$2.5000
  • 500:$2.2400
  • 1000:$1.8900
  • 2500:$1.8000
TK100A08N1,S4X(S
DISTI # 8912857		Toshiba America Electronic ComponentsMOSFETU-MOS880V/100ATO220SIS, PK24
  • 2:£2.3800
  • 10:£2.0950
  • 40:£1.8350
  • 100:£1.7150
  • 200:£1.6200
TK100A08N1,S4X(S
DISTI # 8276090P		Toshiba America Electronic ComponentsMOSFETU-MOS880V/100ATO220SIS, BG60
  • 20:£2.0950
  • 40:£1.8350
  • 74:£1.7150
  • 150:£1.6200
TK100A08N1,S4XToshiba America Electronic ComponentsMOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
RoHS: Compliant		Americas -
    TK100A08N1S4XToshiba America Electronic ComponentsMOSFET MOSFET TRAN TO-220SIS 45W /1
    RoHS: Compliant    		Americas -
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      Verfügbarkeit
      Aktie:
      53
      Auf Bestellung:
      2036
      Menge eingeben:
      Der aktuelle Preis von TK100A08N1,S4X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,78 $
      3,78 $
      10
      3,04 $
      30,40 $
      100
      2,77 $
      277,00 $
      250
      2,50 $
      625,00 $
      500
      2,24 $
      1 120,00 $
      1000
      1,89 $
      1 890,00 $
      2500
      1,80 $
      4 500,00 $
      5000
      1,73 $
      8 650,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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