STGB20N45LZAG

STGB20N45LZAG
Mfr. #:
STGB20N45LZAG
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors PTD HIGH VOLTAGE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGB20N45LZAG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGB20N45LZAG Mehr Informationen STGB20N45LZAG Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
D2PAK-3
Montageart:
SMD/SMT
Kollektor- Emitterspannung VCEO Max:
450 V
Kollektor-Emitter-Sättigungsspannung:
1.25 V
Maximale Gate-Emitter-Spannung:
16 V
Kontinuierlicher Kollektorstrom bei 25 C:
25 A
Pd - Verlustleistung:
150 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGB20N45LZAG
Qualifikation:
AEC-Q101
Kontinuierlicher Kollektorstrom Ic Max:
25 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
625 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Tags
STGB20N, STGB20, STGB2, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive-Grade Internally Clamped IGBTs
STMicroelectronics Automotive-Grade Internally Clamped IGBTs use the advanced PowerMESH™ technology optimized for coil driving in the harsh environments in automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. The ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.Learn More
Bild Teil # Beschreibung
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MOSFET MOSFT 100V 140A 7mOhm 170nC
FQPF16N25C

Mfr.#: FQPF16N25C

OMO.#: OMO-FQPF16N25C

MOSFET N-CH/250V /16A/QFET
TNY268GN

Mfr.#: TNY268GN

OMO.#: OMO-TNY268GN

AC/DC Converters 15W 85-265 VAC 19W/230 VAC
IRF630NSTRLPBF

Mfr.#: IRF630NSTRLPBF

OMO.#: OMO-IRF630NSTRLPBF

MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
FCH104N60F

Mfr.#: FCH104N60F

OMO.#: OMO-FCH104N60F

MOSFET N-Channel SuperFET
PIC16F886-I/SP

Mfr.#: PIC16F886-I/SP

OMO.#: OMO-PIC16F886-I-SP

8-bit Microcontrollers - MCU 14KB Flash 368 RAM 25 I/O
NCP1236BD65R2G

Mfr.#: NCP1236BD65R2G

OMO.#: OMO-NCP1236BD65R2G

Switching Controllers BRWN AREC OCP OVP 65KHZ
FQPF16N25C

Mfr.#: FQPF16N25C

OMO.#: OMO-FQPF16N25C-ON-SEMICONDUCTOR

MOSFET N-CH 250V 15.6A TO-220F
TNY268GN

Mfr.#: TNY268GN

OMO.#: OMO-TNY268GN-POWER-INTEGRATIONS

AC/DC Converters 15W 85-265 VAC 19W/230 VAC
FCH104N60F

Mfr.#: FCH104N60F

OMO.#: OMO-FCH104N60F-ON-SEMICONDUCTOR

MOSFET N-CH 600V 37A TO-247
Verfügbarkeit
Aktie:
197
Auf Bestellung:
2180
Menge eingeben:
Der aktuelle Preis von STGB20N45LZAG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,21 $
2,21 $
10
1,88 $
18,80 $
100
1,50 $
150,00 $
500
1,32 $
660,00 $
1000
1,09 $
1 090,00 $
2000
1,02 $
2 040,00 $
5000
0,98 $
4 880,00 $
10000
0,94 $
9 380,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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