IRF630NSTRLPBF

Mfr. #:: IRF630NSTRLPBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF630NSTRLPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF630NSTRLPBF Datasheet IRF630NSTRLPBF Datasheet (P4-P6)IRF630NSTRLPBF Datasheet (P7-P9)IRF630NSTRLPBF Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:: IRF630NSTRLPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 200 V

Id - Kontinuierlicher Drainstrom:: 9.3 A

Rds On - Drain-Source-Widerstand:: 300 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 23.3 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 82 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 2.3 mm

Länge:: 6.5 mm

Transistortyp:: 1 N-Channel

Breite:: 6.22 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 4.9 S

Abfallzeit:: 15 ns

Produktart:: MOSFET

Anstiegszeit:: 14 ns

Werkspackungsmenge:: 800

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 27 ns

Typische Einschaltverzögerungszeit:: 7.9 ns

Teil # Aliase:: SP001564548

Gewichtseinheit:: 0.139332 oz

Tags: IRF630NST, IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630NSTRLPBF Beschreibung

***ure Electronics: Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

***eco: IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

***roFlash: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N-CH, 200V, 9.3A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 82W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

IRF630NSTRLPBF Mehr Informationen

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF630NSTRLPBF DISTI # V72:2272_13890568	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	968	500:$0.5869 250:$0.6470 100:$0.6489 25:$0.7894 10:$0.7926 1:$0.8895
IRF630NSTRLPBF DISTI # IRF630NSTRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1915In Stock	100:$1.0587 10:$1.3210 1:$1.4800
IRF630NSTRLPBF DISTI # IRF630NSTRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	1600In Stock	800:$0.7183
IRF630NSTRLPBF DISTI # 26196294	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	968	500:$0.5869 250:$0.6470 100:$0.6489 25:$0.7894 18:$0.7926
IRF630NSTRLPBF DISTI # IRF630NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Reel	Americas - 2400	1600:$0.4099 3200:$0.3949 4800:$0.3809 8000:$0.3679 16000:$0.3619
IRF630NSTRLPBF DISTI # SP001564548	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564548) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 36600	800:€0.4569 1600:€0.4309 3200:€0.4059 4800:€0.4049 8000:€0.3969
IRF630NSTRLPBF DISTI # IRF630NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Tape and Reel	Asia - 0
IRF630NSTRLPBF DISTI # 13AC9181	Infineon Technologies AG	MOSFET, N-CH, 200V, 9.3A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	1653	1:$1.2800 10:$1.1000 25:$1.0200 50:$0.9450 100:$0.8660 250:$0.8200 500:$0.7730
IRF630NSTRLPBF DISTI # 70019553	Infineon Technologies AG	IRF630NSTRLPBF N-channel MOSFET Transistor,9.3 A,200 V,3+Tab-Pin D2PAK RoHS: Compliant	0	1600:$1.9900
IRF630NSTRLPBF	International Rectifier	RoHS: Not Compliant	600	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
IRF630NSTRLPBF DISTI # 942-IRF630NSTRLPBF	Infineon Technologies AG	MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS: Compliant	1017	1:$1.1700 10:$0.9980 100:$0.7670 500:$0.6770 800:$0.5350 2400:$0.4740 9600:$0.4570
IRF630NSTRLPBF DISTI # 9154945P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 200V 9.5A D2PAK, RL	336	80:£0.6380 400:£0.5550 800:£0.3870 2000:£0.3790
IRF630NSTRLPBF DISTI # IRF630NSPBF-GURT	Infineon Technologies AG	N-Ch 200V 9,3A 82W 0,3R DPak RoHS: Compliant	360	10:€0.6660 50:€0.3960 200:€0.3060 500:€0.2950
IRF630NSTRLPBF DISTI # 2725890	Infineon Technologies AG	MOSFET, N-CH, 200V, 9.3A, TO-263 RoHS: Compliant	2398	5:£0.7880 25:£0.6510 100:£0.5920 250:£0.5660 500:£0.3950
IRF630NSTRLPBF DISTI # 2725890	Infineon Technologies AG	MOSFET, N-CH, 200V, 9.3A, TO-263 RoHS: Compliant	1648	1:$1.8500 10:$1.5800 100:$1.2200 500:$1.0800 800:$0.8470 2400:$0.7500 9600:$0.7240
IRF630NSTRLPBF DISTI # XSLY00000006692	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	1152	1600:$0.5429
IRF630NSTRLPBF DISTI # C1S322000481444	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	968	250:$0.6470 100:$0.6489 25:$0.7894 10:$0.7926
IRF630NSTRLPBF DISTI # C1S322000481435	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	6400	2400:$0.4230 1600:$0.5110 800:$0.5520

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von IRF630NSTRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,16 $~~; ~~1,16 $~~

10: ~~1,00 $~~; ~~9,98 $~~

100: ~~0,77 $~~; ~~76,70 $~~

500: ~~0,68 $~~; ~~338,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IRF630NST 6
IRF630NS 8
IRF630N 18
IRF630 63
IRF63 102
IRF6 688
IRF 8615

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IRF630NSTRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes