PartNumber | IRF630NPBF | IRF630NLPBF | IRF630NL |
Description | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | MOSFET N-CH 200V 9.3A TO-262 |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 9.3 A | 9.3 A | - |
Rds On Drain Source Resistance | 300 mOhms | 300 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 23.3 nC | 23.3 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 82 W | 82 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Height | 15.65 mm | 9.45 mm | - |
Length | 10 mm | 10.2 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.4 mm | 4.5 mm | - |
Brand | Infineon Technologies | Infineon / IR | - |
Forward Transconductance Min | 4.9 S | 4.9 S | - |
Fall Time | 15 ns | 15 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 14 ns | 14 ns | - |
Factory Pack Quantity | 1000 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 27 ns | 27 ns | - |
Typical Turn On Delay Time | 7.9 ns | 7.9 ns | - |
Part # Aliases | SP001564792 | SP001559690 | - |
Unit Weight | 0.211644 oz | 0.084199 oz | - |