IRF630NSPBF

Mfr. #:: IRF630NSPBF
Hersteller:: Infineon Technologies
Beschreibung:: Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF630NSPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF630NSPBF Datasheet IRF630NSPBF Datasheet (P4-P6)IRF630NSPBF Datasheet (P7-P9)IRF630NSPBF Datasheet (P10-P11)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: IR

Produktkategorie: FETs - Einzeln

Verpackung: Rohr

Gewichtseinheit: 0.139332 oz

Montageart: SMD/SMT

Paket-Koffer: TO-252-3

Technologie: Si

Anzahl der Kanäle: 1 Channel

Aufbau: Single

Transistor-Typ: 1 N-Channel

Pd-Verlustleistung: 82 W

Maximale-Betriebstemperatur: + 175 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 15 ns

Anstiegszeit: 14 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 9.5 A

Vds-Drain-Source-Breakdown-Voltage: 200 V

Rds-On-Drain-Source-Widerstand: 300 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 27 ns

Typische-Einschaltverzögerungszeit: 7.9 ns

Qg-Gate-Ladung: 23.3 nC

Kanal-Modus: Erweiterung

Tags: IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630NSPBF Beschreibung

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF630NSPBF DISTI # V36:1790_13890565	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube	7	100:$1.2055 25:$1.3058 10:$1.4732 1:$1.6815
IRF630NSPBF DISTI # IRF630NSPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 850 Container: Tube	Limited Supply - Call
IRF630NSPBF DISTI # C1S322000589278	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube RoHS: Compliant	7	10:$1.5584
IRF630NSPBF DISTI # 38K2816	Infineon Technologies AG	MOSFET Transistor, N Channel, 9.3 A, 200 V, 300 mohm, 10 V, 4 V , RoHS Compliant: Yes	0
IRF630NSPBF DISTI # 942-IRF630NSPBF	Infineon Technologies AG	MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC RoHS: Compliant	0
IRF630NSPBF	International Rectifier	Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2539	1000:$0.6900 500:$0.7300 100:$0.7600 25:$0.7900 1:$0.8500
IRF630NSPBF	International Rectifier		29
IRF630NSPBF	International Rectifier	RoHS: Compliant	Europe - 47
IRF630NSTRLPBF DISTI # IRF630NSPBF-GURT	Infineon Technologies AG	N-Ch 200V 9,3A 82W 0,3R DPak RoHS: Compliant	360	10:€0.6660 50:€0.3960 200:€0.3060 500:€0.2950
IRF630NSPBF DISTI # 8648352	Infineon Technologies AG	MOSFET, N, 200V, 9.5A, D2-PAK RoHS: Compliant	2	1:$2.6200 10:$2.2400 100:$1.7800 500:$1.5700 1000:$1.3000 2500:$1.2800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF630 OMO.#: OMO-IRF630	MOSFET N-Ch 200 Volt 10 Amp
	Mfr.#: IRF630STRL OMO.#: OMO-IRF630STRL-VISHAY	MOSFET N-CH 200V 9A D2PAK
	Mfr.#: IRF634BTSTU_FP001 OMO.#: OMO-IRF634BTSTU-FP001-1190	250V N-Channel BFET MOSFET
	Mfr.#: IRF634NL OMO.#: OMO-IRF634NL-1190	Neu und Original
	Mfr.#: IRF630,IRF630NPBF, OMO.#: OMO-IRF630-IRF630NPBF--1190	Neu und Original
	Mfr.#: IRF6305TRL OMO.#: OMO-IRF6305TRL-1190	Neu und Original
	Mfr.#: IRF630BTSTU_FP001 OMO.#: OMO-IRF630BTSTU-FP001-ON-SEMICONDUCTOR	MOSFET N-CH 200V 9A TO-220
	Mfr.#: IRF630ZFP/RDN100N20 OMO.#: OMO-IRF630ZFP-RDN100N20-1190	Neu und Original
	Mfr.#: IRF634A OMO.#: OMO-IRF634A-1190	Neu und Original
	Mfr.#: IRF634PBF,IRF634 OMO.#: OMO-IRF634PBF-IRF634-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von IRF630NSPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,04 $~~; ~~1,04 $~~

10: ~~0,98 $~~; ~~9,83 $~~

100: ~~0,93 $~~; ~~93,15 $~~

500: ~~0,88 $~~; ~~439,90 $~~

1000: ~~0,83 $~~; ~~828,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

IRF630NS 8
IRF630N 18
IRF630 63
IRF63 102
IRF6 688
IRF 8615

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IRF630NSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes