 |  | | |
| PartNumber | IRF630NSTRLPBF | IRF630NS | IRF630NSPBF |
| Description | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | MOSFET N-CH 200V 9.3A D2PAK | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9.3 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 82 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Tube | Tube |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 4.9 S | - | - |
| Fall Time | 15 ns | 15 ns | 15 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | 14 ns | 14 ns |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | 27 ns | 27 ns |
| Typical Turn On Delay Time | 7.9 ns | 7.9 ns | 7.9 ns |
| Part # Aliases | SP001564548 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | TO-252-3 | TO-252-3 |
| Pd Power Dissipation | - | 82 W | 82 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 9.5 A | 9.5 A |
| Vds Drain Source Breakdown Voltage | - | 200 V | 200 V |
| Rds On Drain Source Resistance | - | 300 mOhms | 300 mOhms |
| Qg Gate Charge | - | 23.3 nC | 23.3 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF630NSTRLPBF | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | |
| IRF630NS | MOSFET N-CH 200V 9.3A D2PAK | ||
| IRF630NSTRR | MOSFET N-CH 200V 9.3A D2PAK | ||
| IRF630NSTRRPBF | MOSFET N-CH 200V 9.3A D2PAK | ||
| IRF630NSPBF | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | ||
| IRF630NSTRLPBF | Darlington Transistors MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | ||
Infineon / IR |
IRF630NSTRRPBF | MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | |
| IRF630NSTRL | MOSFET, N-CH, 200V, 9.3A, TO-263 | ||
| IRF630NSTRPBF | Neu und Original | ||
| IRF630NSTRPBF,IRF640NSTR | Neu und Original |