 |  | | |
| PartNumber | IRF630NSTRLPBF | IRF630NSTRL | IRF630NSTRPBF |
| Description | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | MOSFET, N-CH, 200V, 9.3A, TO-263 | |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9.3 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 82 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 4.9 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 7.9 ns | - | - |
| Part # Aliases | SP001564548 | - | - |
| Unit Weight | 0.139332 oz | - | - |