IRF630NST

IRF630NSTRLPBF vs IRF630NSTRRPBF vs IRF630NSTRR

 
PartNumberIRF630NSTRLPBFIRF630NSTRRPBFIRF630NSTRR
DescriptionMOSFET MOSFT 200V 9.5A 300mOhm 23.3nCMOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nCMOSFET N-CH 200V 9.3A D2PAK
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current9.3 A9.5 A-
Rds On Drain Source Resistance300 mOhms300 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge23.3 nC23.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation82 W82 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min4.9 S4.9 S-
Fall Time15 ns15 ns-
Product TypeMOSFETMOSFET-
Rise Time14 ns14 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns27 ns-
Typical Turn On Delay Time7.9 ns7.9 ns-
Part # AliasesSP001564548SP001561818-
Unit Weight0.139332 oz0.139332 oz-
Vgs th Gate Source Threshold Voltage-4 V-
Type-HEXFET Power MOSFET-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRF630NSTRLPBF MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
IRF630NSTRR MOSFET N-CH 200V 9.3A D2PAK
IRF630NSTRRPBF MOSFET N-CH 200V 9.3A D2PAK
IRF630NSTRLPBF Darlington Transistors MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Infineon / IR
Infineon / IR
IRF630NSTRRPBF MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
IRF630NSTRL MOSFET, N-CH, 200V, 9.3A, TO-263
IRF630NSTRPBF Neu und Original
IRF630NSTRPBF,IRF640NSTR Neu und Original
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