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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP298L6327HUSA1 DISTI # BSP298L6327HUSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 400V 500MA SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP298L6327HUSA1 DISTI # BSP298L6327HUSA1 | Infineon Technologies AG | MOSFET N-CH 400V 500MA SOT-223 - Bulk (Alt: BSP298L6327HUSA1) RoHS: Compliant Min Qty: 676 Container: Bulk | Americas - 0 |
|
| BSP298 L6327 DISTI # 726-BSP298L6327 | Infineon Technologies AG | MOSFET N-Ch 400V 500mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP298L6327HUSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.5A I(D), 400V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 194000 |
|
| BSP298L6327 | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 0.5A I(D), 400V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 139 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP295 H6327 OMO.#: OMO-BSP295-H6327-1190 |
Trans MOSFET N-CH 60V 1.8A Automotive T/R |
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Mfr.#: BSP296 E6433 OMO.#: OMO-BSP296-E6433-1190 |
Neu und Original |
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Mfr.#: BSP296E6327 |
MOSFET N-CH 100V 1.1A SOT223 |
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Mfr.#: BSP296NH6327 OMO.#: OMO-BSP296NH6327-1190 |
MOSFET, N-CH, 100V, 1.2A, SOT-223-4 |
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Mfr.#: BSP297 OMO.#: OMO-BSP297-1190 |
MOSFET, N, LOGIC, SOT-223 |
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Mfr.#: BSP297L6327HTSA1 |
MOSFET N-CH 200V 660MA SOT-223 |
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Mfr.#: BSP297L6327XT OMO.#: OMO-BSP297L6327XT-1190 |
Neu und Original |
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Mfr.#: BSP299L6327 OMO.#: OMO-BSP299L6327-1190 |
Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP296NH6433XTMA1 |
MOSFET N-CH 100V 1.1A SOT-223 |
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Mfr.#: BSP295E6327T |
MOSFET N-CH 60V 1.8A SOT223 |