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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 - Bulk (Alt: BSP297L6327HTSA1) Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| BSP297 L6327 DISTI # 726-BSP297L6327 | Infineon Technologies AG | MOSFET N-Ch 200V 660mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP297L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 273290 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSP297L6327 OMO.#: OMO-BSP297L6327-1190 |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP297L6327HTSA1 |
MOSFET N-CH 200V 660MA SOT-223 |
|
|
Mfr.#: BSP297L6327XT OMO.#: OMO-BSP297L6327XT-1190 |
Neu und Original |
