PartNumber | BSP297H6327XTSA1 | BSP297 H6327 | BSP297 E6327 |
Description | MOSFET N-Ch 200V 660mA SOT-223-3 | MOSFET N-Ch 200V 660mA SOT-223-3 | MOSFET N-CH 200V 660MA SOT-223 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-SOT-223-4 | SOT-223-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 660 mA | 660 mA | - |
Rds On Drain Source Resistance | 1.8 Ohms | 1 Ohms | - |
Vgs th Gate Source Threshold Voltage | 800 mV | 800 mV | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 12.9 nC | 16.1 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.8 W | 1.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.6 mm | 1.6 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | BSP297 | BSP297 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.5 mm | 3.5 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 470 mS | 470 mS | - |
Fall Time | 19 ns | 19 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.8 ns | 3.8 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 49 ns | 49 ns | - |
Typical Turn On Delay Time | 5.2 ns | 5.2 ns | - |
Part # Aliases | BSP297 H6327 SP001058622 | BSP297H6327XTSA1 SP001058622 | - |
Unit Weight | 0.003951 oz | 0.003951 oz | - |