BSP297

BSP297H6327XTSA1 vs BSP297 H6327 vs BSP297 E6327

 
PartNumberBSP297H6327XTSA1BSP297 H6327BSP297 E6327
DescriptionMOSFET N-Ch 200V 660mA SOT-223-3MOSFET N-Ch 200V 660mA SOT-223-3MOSFET N-CH 200V 660MA SOT-223
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-SOT-223-4SOT-223-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current660 mA660 mA-
Rds On Drain Source Resistance1.8 Ohms1 Ohms-
Vgs th Gate Source Threshold Voltage800 mV800 mV-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge12.9 nC16.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.8 W1.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.6 mm1.6 mm-
Length6.5 mm6.5 mm-
SeriesBSP297BSP297-
Transistor Type1 N-Channel1 N-Channel-
Width3.5 mm3.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min470 mS470 mS-
Fall Time19 ns19 ns-
Product TypeMOSFETMOSFET-
Rise Time3.8 ns3.8 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time49 ns49 ns-
Typical Turn On Delay Time5.2 ns5.2 ns-
Part # AliasesBSP297 H6327 SP001058622BSP297H6327XTSA1 SP001058622-
Unit Weight0.003951 oz0.003951 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSP297H6327XTSA1 MOSFET N-Ch 200V 660mA SOT-223-3
BSP297 H6327 MOSFET N-Ch 200V 660mA SOT-223-3
BSP297 E6327 MOSFET N-CH 200V 660MA SOT-223
BSP297H6327XTSA1 MOSFET N-CH 200V 660MA SOT-223
BSP297L6327HTSA1 MOSFET N-CH 200V 660MA SOT-223
BSP297H6327 200V,0.66A,N-Ch Small-Signal MOSFET
BSP297 MOSFET, N, LOGIC, SOT-223
BSP297 , TEA1791T/N1 , B Neu und Original
BSP297 H6327 Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP297 L6327 MOSFET N-Ch 200V 660mA SOT-223-3
BSP297E6327 0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET
BSP297H6327XTSA1/SN Neu und Original
BSP297L6327 Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP297L6327XT Neu und Original
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