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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSP297 E6327 DISTI # BSP297E6327-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP297E6327 | Siemens | 0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET | 108 |
|
| BSP297E6327 | Infineon Technologies AG | 982 | ||
| BSP297 E6327 | Infineon Technologies AG | 520 | ||
| BSP297E6327 | Siemens | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 590 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BSP299L3627 OMO.#: OMO-BSP299L3627-1190 |
Neu und Original |
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Mfr.#: BSP295 OMO.#: OMO-BSP295-1190 |
MOSFET, N CHANNEL, 60V, 1.8A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1.8A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.22ohm, Rds(on) Test Voltage Vgs:10V, |
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Mfr.#: BSP296 OMO.#: OMO-BSP296-1190 |
N CHANNEL MOSFET, 100V, 1A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.8ohm, Rds(on) Test Voltage Vgs:10V, Thr |
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Mfr.#: BSP296 E6433 OMO.#: OMO-BSP296-E6433-1190 |
Neu und Original |
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Mfr.#: BSP296 L6433 OMO.#: OMO-BSP296-L6433-1190 |
MOSFET N-Ch 100V 1.1A SOT-223-3 |
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Mfr.#: BSP296L6433 OMO.#: OMO-BSP296L6433-1190 |
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP297L6327 OMO.#: OMO-BSP297L6327-1190 |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP296NH6433XTMA1 |
MOSFET N-CH 100V 1.1A SOT-223 |
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Mfr.#: BSP295E6327T |
MOSFET N-CH 60V 1.8A SOT223 |
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Mfr.#: BSP295H6327XTSA1 |
MOSFET N-CH 60V 1.8A SOT223 |