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IRF60B217

IRF60B217
Mfr. #:
IRF60B217
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF60B217 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF60B217 DatasheetIRF60B217 Datasheet (P4-P6)IRF60B217 Datasheet (P7-P9)IRF60B217 Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRF60B217 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
7.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
44 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Breite:
4.4 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
150 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
37 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
8.3 ns
Teil # Aliase:
SP001571396
Gewichtseinheit:
0.081130 oz
Tags
IRF60, IRF6, IRF
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB Infineon IRF60B217
***et
Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube
***ure Electronics
Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***i-Key
MOSFET N-CH 60V 60A
***ark
Mosfet, N-Ch, 60V, 60A, To-220Ab; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 60V, 60A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET, HEXFET Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 60V, 60A, TO-220AB; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:60A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.0073ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.7V; Straty mocy Pd:83W; Rodzaj obudowy tranzystora:TO-220AB; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:StrongIRFET, HEXFET Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRF60B217
DISTI # V99:2348_14701516		Infineon Technologies AGTrans MOSFET N-CH Si 60V 60A Tube
RoHS: Compliant		2785
  • 1:$1.1982
IRF60B217
DISTI # IRF60B217-ND		Infineon Technologies AGMOSFET N-CH 60V 60A
RoHS: Compliant
Min Qty: 1
Container: Tube		3826In Stock
  • 1000:$0.8055
  • 500:$0.9721
  • 100:$1.2499
  • 10:$1.5550
  • 1:$1.7200
IRF60B217
DISTI # 29529430		Infineon Technologies AGTrans MOSFET N-CH Si 60V 60A Tube
RoHS: Compliant		2785
  • 2000:$0.6848
  • 1000:$0.7102
  • 500:$0.7729
  • 100:$0.8677
  • 12:$1.0438
IRF60B217
DISTI # IRF60B217		Infineon Technologies AGTrans MOSFET N 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF60B217)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.5819
  • 5000:$0.5609
  • 8000:$0.5399
  • 15000:$0.5219
  • 30000:$0.5129
IRF60B217
DISTI # 12AC9751		Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power RoHS Compliant: Yes5948
  • 1:$1.5900
  • 10:$1.3700
  • 100:$1.1200
  • 500:$0.9910
  • 1000:$0.8430
  • 2500:$0.7920
  • 10000:$0.7430
IRF60B217
DISTI # 942-IRF60B217		Infineon Technologies AGMOSFET 60V, 60A, 9.0 mOhm 44 nC Qg
RoHS: Compliant		828
  • 1:$1.4900
  • 10:$1.2700
  • 100:$1.0100
  • 500:$0.8840
  • 1000:$0.7330
IRF60B217
DISTI # 1236144		Infineon Technologies AGSTRONGIR FET 60V 60A 9.0 MOHMTO220AB, PK3040
  • 10:£1.2810
  • 50:£1.0890
  • 200:£0.9610
  • 500:£0.8330
IRF60B217
DISTI # C1S322000609819		Infineon Technologies AGMOSFETs2785
  • 1000:$0.6972
  • 500:$0.7728
  • 100:$0.8675
  • 10:$1.0436
IRF60B217
DISTI # 2709977		Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220AB
RoHS: Compliant		5953
  • 5:£1.0700
  • 25:£0.9450
  • 100:£0.7730
  • 250:£0.7240
  • 500:£0.6750
IRF60B217
DISTI # 2709977		Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220AB
RoHS: Compliant		5948
  • 1:$2.7500
  • 10:$2.4800
  • 100:$2.0000
  • 500:$1.5500
  • 1000:$1.2900
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Mfr.#: AN-1307-A

OMO.#: OMO-AN-1307-A

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IR2104PBF

Mfr.#: IR2104PBF

OMO.#: OMO-IR2104PBF-INFINEON-TECHNOLOGIES

 Gate Drivers Hlf Brdg Drvr 1 Inpt + Invrt ShutDwn Pin
DLW5BTH251TQ2L

Mfr.#: DLW5BTH251TQ2L

OMO.#: OMO-DLW5BTH251TQ2L-MURATA-ELECTRONICS

 CMC 3A 2LN 250 OHM SMD
BZG05C75-M3-08

Mfr.#: BZG05C75-M3-08

OMO.#: OMO-BZG05C75-M3-08-VISHAY

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OMO.#: OMO-TPSM84212EAB-TEXAS-INSTRUMENTS

 DC DC CONVERTER 12V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von IRF60B217 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,48 $
1,48 $
10
1,26 $
12,60 $
100
1,01 $
101,00 $
500
0,88 $
442,00 $
1000
0,73 $
733,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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