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HGTG27N120BN

HGTG27N120BN
Mfr. #:
HGTG27N120BN
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 1200V 72A 500W TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTG27N120BN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Leistung max
500W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
72A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
216A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 27A
Schaltenergie
2.2mJ (on), 2.3mJ (off)
Gate-Gebühr
270nC
Td-ein-aus-25°C
24ns/195ns
Testbedingung
960V, 27A, 3 Ohm, 15V
Tags
HGTG27N120BN, HGTG27N1, HGTG27, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 72A 500000mW 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG27N120BN 72 A 1200 V NPT Series N-Channel IGBT - TO-247-3
***eco
Transistor HGTG27N120 IGBT N-Channel 1.2kVolt 72Amp TO-247
***p One Stop Japan
Trans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail
***ser
IGBTs 72A, 1200V, NPT Series N-Ch IGBT
***et
PWR IGBT 56A 1200V NPT N-CHANNEL TO-247
***ark
Nptpigbt To247 56A 1200V Rohs Compliant: Yes
***th Star Micro
IGBT NPT N-CH 1200V 72A TO-247
***Semiconductor
1200V, NPT IGBT
***rchild Semiconductor
HGTG27N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***nell
IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:72A; Voltage, Vce Sat Max:2.7V; Power Dissipation:500W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
***ment14 APAC
IGBT, N 72A, 1200V TO-247; Transistor Type:IGBT; DC Collector Current:72A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:72A; Package / Case:TO-247; Power Dissipation Max:500W; Power Dissipation Pd:500W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Teil # Mfg. Beschreibung Aktie Preis
HGTG27N120BN
DISTI # HGTG27N120BN-ND		ON SemiconductorIGBT 1200V 72A 500W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$3.6143
  • 900:$4.2855
  • 450:$4.7760
  • 10:$6.1440
  • 1:$6.8400
HGTG27N120BN
DISTI # HGTG27N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG27N120BN)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$2.7900
  • 10:$2.7900
  • 25:$2.7900
  • 50:$2.6900
  • 100:$2.6900
  • 500:$2.6900
  • 1000:$2.6900
HGTG27N120BN
DISTI # HGTG27N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG27N120BN)
RoHS: Compliant
Min Qty: 450		Asia - 0
    HGTG27N120BN
    DISTI # HGTG27N120BN    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG27N120BN)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€3.4900
    • 10:€3.1900
    • 25:€3.0900
    • 50:€2.9900
    • 100:€2.8900
    • 500:€2.7900
    • 1000:€2.5900
    HGTG27N120BN
    DISTI # 58K1590    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 72A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1590)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$7.5200
    • 10:$6.7500
    • 25:$6.4600
    • 50:$6.1600
    • 100:$5.8500
    • 250:$5.5600
    • 500:$5.2600
    HGTG27N120BN
    DISTI # 61M6561    		ON SemiconductorIGBT Single Transistor, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes688
    • 1:$6.3900
    • 10:$5.5300
    • 25:$4.8400
    • 50:$4.5400
    • 100:$3.9300
    • 250:$3.3000
    • 500:$3.2000
    HGTG27N120BN
    DISTI # 58K1590    		ON SemiconductorIGBT, N 72A, 1200V TO-247,DC Collector Current:72A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes402
    • 1:$7.7500
    • 10:$6.9800
    • 25:$6.6900
    • 50:$6.3900
    • 100:$6.0800
    • 250:$5.7900
    • 500:$5.4900
    HGTG27N120BN.
    DISTI # 27AC6331    		Fairchild Semiconductor CorporationNPTPIGBT TO247 56A 1200V ROHS COMPLIANT: YES0
    • 1:$7.6700
    • 10:$6.8900
    • 25:$6.5900
    • 50:$6.1600
    • 100:$5.8500
    • 250:$5.5600
    • 500:$5.2600
    HGTG27N120BNFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant    		7160
    • 1000:$4.5500
    • 500:$4.7900
    • 100:$4.9900
    • 25:$5.2000
    • 1:$5.6000
    HGTG27N120BN
    DISTI # 512-HGTG27N120BN    		ON SemiconductorIGBT Transistors 72A 1200V NPT Series N-Ch IGBT
    RoHS: Compliant    		0
      HGTG27N120BN
      DISTI # 1470994      		ON SemiconductorIGBT, N 72A, 1200V TO-247
      RoHS: Compliant      		1090
      • 1:$10.8300
      • 10:$9.7300
      • 450:$7.5600
      • 900:$6.7900
      • 1350:$5.7200
      HGTG27N120BN
      DISTI # 1470994      		ON SemiconductorIGBT, N 72A, 1200V TO-247
      RoHS: Compliant      		1113
      • 1:£6.4500
      • 10:£4.7400
      • 100:£4.2200
      • 250:£3.6900
      • 500:£3.3000
      Bild Teil # Beschreibung
      HGTG27N120BN

      Mfr.#: HGTG27N120BN

      OMO.#: OMO-HGTG27N120BN

      		 IGBT Transistors 72A 1200V NPT Series N-Ch IGBT
      HGTG27N120BG

      Mfr.#: HGTG27N120BG

      OMO.#: OMO-HGTG27N120BG-1190

      		 Neu und Original
      HGTG27N120BN

      Mfr.#: HGTG27N120BN

      OMO.#: OMO-HGTG27N120BN-ON-SEMICONDUCTOR

      		 IGBT 1200V 72A 500W TO247
      HGTG27N120BN G27N120BN

      Mfr.#: HGTG27N120BN G27N120BN

      OMO.#: OMO-HGTG27N120BN-G27N120BN-1190

      		 Neu und Original
      HGTG27N120BN(72A1200V)

      Mfr.#: HGTG27N120BN(72A1200V)

      OMO.#: OMO-HGTG27N120BN-72A1200V--1190

      		 Neu und Original
      HGTG27N120BND

      Mfr.#: HGTG27N120BND

      OMO.#: OMO-HGTG27N120BND-1190

      		 Neu und Original
      HGTG27N60C3R

      Mfr.#: HGTG27N60C3R

      OMO.#: OMO-HGTG27N60C3R-1190

      		 Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von HGTG27N120BN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,96 $
      3,96 $
      10
      3,76 $
      37,61 $
      100
      3,56 $
      356,33 $
      500
      3,37 $
      1 682,70 $
      1000
      3,17 $
      3 167,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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