 |  | | |
| PartNumber | HGTG27N120BN | HGTG27N120BG | HGTG27N120BN G27N120BN |
| Description | IGBT Transistors 72A 1200V NPT Series N-Ch IGBT | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.45 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 72 A | - | - |
| Pd Power Dissipation | 500 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTG27N120BN | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 72 A | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 72 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.225401 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG27N120BN | IGBT Transistors 72A 1200V NPT Series N-Ch IGBT | |
| HGTG27N120BG | Neu und Original | ||
| HGTG27N120BN G27N120BN | Neu und Original | ||
| HGTG27N120BN(72A1200V) | Neu und Original | ||
| HGTG27N120BND | Neu und Original | ||
ON Semiconductor |
HGTG27N120BN | IGBT 1200V 72A 500W TO247 | |
| HGTG27N60C3R | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-247 |