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IPI147N12N3G

IPI147N12N3G
Mfr. #:
IPI147N12N3G
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI147N12N3G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPI147, IPI14, IPI1, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPI147N12N3GAKSA1
DISTI # V99:2348_06384034		Infineon Technologies AGTrans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		155
  • 100:$1.2805
  • 25:$1.3694
  • 10:$1.5110
  • 1:$1.8652
IPI147N12N3GAKSA1
DISTI # V36:1790_06384034		Infineon Technologies AGTrans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		0
  • 500000:$0.6224
  • 250000:$0.6230
  • 50000:$0.7231
  • 5000:$0.9411
  • 500:$0.9800
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1-ND		Infineon Technologies AGMOSFET N-CH 120V 56A TO262-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$0.9818
IPI147N12N3GAKSA1
DISTI # 26197739		Infineon Technologies AGTrans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		155
  • 9:$1.8652
IPI147N12N3 G
DISTI # IPI147N12N3G		Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin TO-262 Tube - Bulk (Alt: IPI147N12N3G)
RoHS: Compliant
Min Qty: 511
Container: Bulk		Americas - 0
  • 5110:$0.6729
  • 2555:$0.6849
  • 1533:$0.7089
  • 1022:$0.7359
  • 511:$0.7629
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1		Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI147N12N3GAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$0.6779
  • 3000:$0.6909
  • 2000:$0.7149
  • 1000:$0.7419
  • 500:$0.7689
IPI147N12N3GAKSA1
DISTI # IPI147N12N3GAKSA1		Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IPI147N12N3GAKSA1)
RoHS: Compliant
Min Qty: 521
Container: Bulk		Americas - 0
  • 5210:$0.6089
  • 2605:$0.6199
  • 1563:$0.6419
  • 1042:$0.6659
  • 521:$0.6909
IPI147N12N3GAKSA1
DISTI # SP000652744		Infineon Technologies AGTrans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 (Alt: SP000652744)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€0.6819
  • 300:€0.7269
  • 200:€0.7989
  • 100:€0.8949
  • 50:€1.1469
IPI147N12N3 G
DISTI # 726-IPI147N12N3G		Infineon Technologies AGMOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
RoHS: Compliant		840
  • 1:$1.6100
  • 10:$1.3800
  • 100:$1.0600
  • 500:$0.9320
  • 1000:$0.7360
IPI147N12N3GInfineon Technologies AGPower Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		15175
  • 1000:$0.7000
  • 500:$0.7300
  • 100:$0.7600
  • 25:$0.8000
  • 1:$0.8600
IPI147N12N3GAKSA1Infineon Technologies AGPower Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant		14000
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
IPI147N12N3GAKSA1Infineon Technologies AG 490
    Bild Teil # Beschreibung
    IPI147N12N3 G

    Mfr.#: IPI147N12N3 G

    OMO.#: OMO-IPI147N12N3-G

    		 MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
    IPI147N12N3GAKSA1

    Mfr.#: IPI147N12N3GAKSA1

    OMO.#: OMO-IPI147N12N3GAKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 120V 56A TO262-3
    IPI147N12N3G

    Mfr.#: IPI147N12N3G

    OMO.#: OMO-IPI147N12N3G-1190

    		 Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI147N12N3 G

    Mfr.#: IPI147N12N3 G

    OMO.#: OMO-IPI147N12N3-G-124

    		 Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IPI147N12N3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,98 $
    0,98 $
    10
    0,93 $
    9,26 $
    100
    0,88 $
    87,75 $
    500
    0,83 $
    414,40 $
    1000
    0,78 $
    780,00 $
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