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FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1
Mfr. #:
FF23MR12W1M1B11BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
Discrete Semiconductor Modules
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FF23MR12W1M1B11BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FF23MR12W1M1B11BOMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungs-MOSFET-Module
Typ:
EasyDUAL-Modul
Vf - Durchlassspannung:
4 V
Vgs - Gate-Source-Spannung:
- 10 V, 20 V
Montageart:
Drücken Sie Fit
Paket / Koffer:
Modul
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Aufbau:
Dual
Marke:
Infineon-Technologien
Polarität des Transistors:
N-Kanal
Abfallzeit:
12 ns
Id - Kontinuierlicher Drainstrom:
50 A
Betriebsversorgungsspannung:
-
Pd - Verlustleistung:
20 mW
Produktart:
Diskrete Halbleitermodule
Rds On - Drain-Source-Widerstand:
23 mOhms
Anstiegszeit:
10 ns
Werkspackungsmenge:
24
Unterkategorie:
Diskrete Halbleitermodule
Handelsname:
CoolSIC
Typische Ausschaltverzögerungszeit:
43.5 ns
Typische Einschaltverzögerungszeit:
12 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Teil # Aliase:
FF23MR12W1M1_B11 SP001602224
Tags
FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1200 V 23 mOhm CoolSiC EasyDual PressFIT/NTC Mosfet Module
***ical
Trans MOSFET N-CH SiC 1.2KV 50A 22-Pin EASY1B-2 Tray
***i-Key
MOSFET 2 N-CH 1200V 50A MODULE
***ronik
IGBT 1200V 50A 4,50V
***ark
Mosfet Module, N-Ch, 1.2Kv, 50A; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:20mW; Operating Temperature Max:150°C; Product Range:CoolSic Series; SVHC:No SVHC (27-Jun-2018)
***nell
MODULO MOSFET, CA-N, 1.2KV, 50A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.023ohm; Tensione Vgs di Misura Rds(on):-; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:20mW; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolSic Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Teil # Mfg. Beschreibung Aktie Preis
FF23MR12W1M1B11BOMA1
DISTI # V99:2348_18204378		Infineon Technologies AGLOW POWER EASY16
  • 1:$92.6000
FF23MR12W1M1B11BOMA1
DISTI # FF23MR12W1M1B11BOMA1-ND		Infineon Technologies AGMOSFET 2 N-CH 1200V 50A MODULE
RoHS: Compliant
Min Qty: 1
Container: Tray		16In Stock
  • 1:$92.7700
FF23MR12W1M1B11BOMA1
DISTI # 33632614		Infineon Technologies AGLOW POWER EASY50
  • 1:$79.6308
FF23MR12W1M1B11BOMA1
DISTI # 31241752		Infineon Technologies AGLOW POWER EASY16
  • 1:$92.6000
FF23MR12W1M1B11BOMA1
DISTI # FF23MR12W1M1B11BOMA1		Infineon Technologies AGIGBTs - Trays (Alt: FF23MR12W1M1B11BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray		Americas - 0
  • 240:$72.0900
  • 144:$73.7900
  • 96:$75.6900
  • 48:$77.6900
  • 24:$78.6900
FF23MR12W1M1B11BOMA1
DISTI # SP001602224		Infineon Technologies AGIGBTs (Alt: SP001602224)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€71.5900
  • 500:€72.5900
  • 100:€73.4900
  • 50:€74.7900
  • 25:€78.6900
  • 10:€79.5900
  • 1:€81.9900
FF23MR12W1M1B11BOMA1
DISTI # 24AC8570		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes18
  • 25:$87.6400
  • 10:$90.6700
  • 5:$94.9400
  • 1:$96.7200
FF23MR12W1M1B11BOMA1
DISTI # 726-FF23MR12W1M1B11		Infineon Technologies AGDiscrete Semiconductor Modules
RoHS: Compliant		86
  • 1:$95.7600
  • 5:$94.0000
  • 10:$89.7700
  • 25:$86.7700
FF23MR12W1M1B11BOMA1
DISTI # 2771413		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A18
  • 50:£64.8900
  • 10:£66.2100
  • 5:£71.7200
  • 1:£73.0700
FF23MR12W1M1B11BOMA1
DISTI # XSKDRABV0050327		Infineon Technologies AG 
RoHS: Compliant		65 in Stock0 on Order
  • 65:$107.0400
  • 24:$114.6900
FF23MR12W1M1B11BOMA1
DISTI # 2771413		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 50A
RoHS: Compliant		18
  • 1:$141.5600
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 MOSFET MODULE 1200V 200A
Verfügbarkeit
Aktie:
74
Auf Bestellung:
2057
Menge eingeben:
Der aktuelle Preis von FF23MR12W1M1B11BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
95,76 $
95,76 $
5
94,00 $
470,00 $
10
89,77 $
897,70 $
25
86,77 $
2 169,25 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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