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FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1
Mfr. #:
FF6MR12W2M1B11BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
Discrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FF6MR12W2M1B11BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FF6MR12W2M1B11BOMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungs-MOSFET-Module
Typ:
EasyDUAL-Modul
Vf - Durchlassspannung:
4.6 V
Vgs - Gate-Source-Spannung:
- 10 V, 20 V
Montageart:
Schraubbefestigung
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Aufbau:
Dual
Marke:
Infineon-Technologien
Polarität des Transistors:
N-Kanal
Abfallzeit:
30 ns
Id - Kontinuierlicher Drainstrom:
200 A
Produktart:
Diskrete Halbleitermodule
Rds On - Drain-Source-Widerstand:
5.63 mOhms
Anstiegszeit:
18.7 ns
Werkspackungsmenge:
15
Unterkategorie:
Diskrete Halbleitermodule
Handelsname:
EasyDUAL; CoolSiC
Typische Ausschaltverzögerungszeit:
62.6 ns
Typische Einschaltverzögerungszeit:
20.4 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
3.45 V
Teil # Aliase:
FF6MR12W2M1_B11 SP001716496
Tags
FF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Teil # Mfg. Beschreibung Aktie Preis
FF6MR12W2M1B11BOMA1
DISTI # V99:2348_22937625		Infineon Technologies AGFF6MR12W2M1B11BOMA10
  • 15000:$279.4500
  • 7500:$279.4600
  • 1500:$285.2800
  • 150:$301.4400
  • 15:$304.5600
FF6MR12W2M1B11BOMA1
DISTI # FF6MR12W2M1B11BOMA1-ND		Infineon Technologies AGMOSFET MODULE 1200V 200A
RoHS: Compliant
Min Qty: 1
Container: Tray		15In Stock
  • 15:$291.6927
  • 1:$304.5600
FF6MR12W2M1B11BOMA1
DISTI # SP001716496		Infineon Technologies AGMOSFET Module MOSFET 200A 3000Vrms Tray (Alt: SP001716496)
RoHS: Compliant
Min Qty: 1
Container: Tray		Europe - 135
  • 1000:€256.6900
  • 500:€260.3900
  • 100:€263.3900
  • 50:€267.9900
  • 25:€282.1900
  • 10:€285.1900
  • 1:€293.9900
FF6MR12W2M1B11BOMA1
DISTI # FF6MR12W2M1B11BOMA1		Infineon Technologies AGMOSFET Module MOSFET 200A 3000Vrms Tray - Trays (Alt: FF6MR12W2M1B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
  • 150:$258.3900
  • 90:$264.6900
  • 60:$271.3900
  • 30:$278.4900
  • 15:$282.1900
FF6MR12W2M1B11BOMA1
DISTI # 726-FF6MR12W2M1B11BO		Infineon Technologies AGDiscrete Semiconductor Modules EasyDUAL 2B 1200 V, 6 mO halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology.
RoHS: Compliant		31
  • 1:$310.9800
  • 5:$303.5000
  • 10:$295.9600
  • 25:$291.8100
FF6MR12W2M1B11BOMA1
DISTI # XSKDRABV0046268		Infineon Technologies AG 
RoHS: Compliant		175 in Stock0 on Order
  • 175:$383.5800
  • 15:$410.9800
Bild Teil # Beschreibung
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C3M0016120K

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OMO.#: OMO-C3M0016120K

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OMO.#: OMO-TPS79901DDCR

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OMO.#: OMO-B32673P6225K000

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CGA5H3C0G2E103J115AE

Mfr.#: CGA5H3C0G2E103J115AE

OMO.#: OMO-CGA5H3C0G2E103J115AE

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 250V 10nF 5% SOFT C0G AEC-Q200
SMBJ24A

Mfr.#: SMBJ24A

OMO.#: OMO-SMBJ24A-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors 24V 600W SMB Unidirectional
QTH-060-03-L-D-A

Mfr.#: QTH-060-03-L-D-A

OMO.#: OMO-QTH-060-03-L-D-A-SAMTEC

 CONN HEADER HS .5MM 120POS DL AU
CPF0402B10RE1

Mfr.#: CPF0402B10RE1

OMO.#: OMO-CPF0402B10RE1-TE-CONNECTIVITY-AMP

 Thin Film Resistors - SMD CPF 0402 10R 0.1% 25PPM 1K RL
TPS79901DDCR

Mfr.#: TPS79901DDCR

OMO.#: OMO-TPS79901DDCR-TEXAS-INSTRUMENTS

 LDO Voltage Regulators 200mA High PSRR LDO
ABM3C-14.7456MHZ-D4Y-T

Mfr.#: ABM3C-14.7456MHZ-D4Y-T

OMO.#: OMO-ABM3C-14-7456MHZ-D4Y-T-ABRACON

 Crystals 14.7456MHz 30ppm 18pF -40C +85C
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von FF6MR12W2M1B11BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
310,98 $
310,98 $
5
303,50 $
1 517,50 $
10
295,96 $
2 959,60 $
25
291,81 $
7 295,25 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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