C3M0016120K

C3M0016120K
Mfr. #:
C3M0016120K
Hersteller:
CInc COM
Beschreibung:
MOSFET SiC MOSFET G3 1200V 16mOhms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
C3M0016120K Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
C3M0016120K Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Cree, Inc.
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
115 A
Rds On - Drain-Source-Widerstand:
28.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
15 V
Qg - Gate-Ladung:
211 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
556 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Cree, Inc.
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
33 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
34 ns
Tags
C3M00, C3M0, C3M
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
C3M0016120K Silicon Carbide Power MOSFET
Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package. The C3M0016120K features high blocking voltage with low on-resistance, as well as high-speed switching with low capacitances. The device offers excellent benefits including a reduction in cooling requirements, switching losses, and gate ringing. Additionally, the C3M0016120K provides an increase in power density and system switching frequency.
Bild Teil # Beschreibung
CAS325M12HM2

Mfr.#: CAS325M12HM2

OMO.#: OMO-CAS325M12HM2

Discrete Semiconductor Modules Half-Bridge Module 1.2kV, 325A Hi-Perf
C4D40120D

Mfr.#: C4D40120D

OMO.#: OMO-C4D40120D

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2x20A
C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K

MOSFET SIC MOSFET 1200V 75 mOhm
CGD15HB62LP

Mfr.#: CGD15HB62LP

OMO.#: OMO-CGD15HB62LP

Power Management IC Development Tools Companion GateDriver for 941-CAS325M12HM2
RC1206FR-07100RL

Mfr.#: RC1206FR-07100RL

OMO.#: OMO-RC1206FR-07100RL

Thick Film Resistors - SMD 100 OHM 1%
CGD15HB62LP

Mfr.#: CGD15HB62LP

OMO.#: OMO-CGD15HB62LP-WOLFSPEED

GATE DRVR 150C FOR 1.2KV 325A HI
C3M0075120K

Mfr.#: C3M0075120K

OMO.#: OMO-C3M0075120K-WOLFSPEED

MOSFET N-CH 1200V 30A TO247-4
CC1206KRX7R9BB104

Mfr.#: CC1206KRX7R9BB104

OMO.#: OMO-CC1206KRX7R9BB104-YAGEO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
C4D40120D

Mfr.#: C4D40120D

OMO.#: OMO-C4D40120D-WOLFSPEED

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2x20A
RC1206FR-07100RL

Mfr.#: RC1206FR-07100RL

OMO.#: OMO-RC1206FR-07100RL-YAGEO

Thick Film Resistors - SMD 100 OHM 1%
Verfügbarkeit
Aktie:
375
Auf Bestellung:
2358
Menge eingeben:
Der aktuelle Preis von C3M0016120K dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
70,59 $
70,59 $
100
67,87 $
6 787,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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