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SIHD9N60E-GE3

SIHD9N60E-GE3
Mfr. #:
SIHD9N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHD9N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD9N60E-GE3 DatasheetSIHD9N60E-GE3 Datasheet (P4-P6)SIHD9N60E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHD9N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
9 A
Rds On - Drain-Source-Widerstand:
320 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
26 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
78 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
31 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
0.011993 oz
Tags
SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 600V 9A 3-Pin DPAK
***ment14 APAC
MOSFET, N-CH, 9A, 600V, TO-252
***ark
Mosfet, N-Ch, 9A, 600V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.32Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3-ND		Vishay SiliconixMOSFET N-CHANNEL 600V 9A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2990In Stock
  • 6000:$0.8586
  • 3000:$0.8916
  • 500:$1.1558
  • 100:$1.4068
  • 25:$1.6512
  • 10:$1.7500
  • 1:$1.9500
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK - Tape and Reel (Alt: SIHD9N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.8059
  • 18000:$0.8279
  • 12000:$0.8519
  • 6000:$0.8879
  • 3000:$0.9149
SIHD9N60E-GE3
DISTI # SIHD9N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 9A 3-Pin DPAK (Alt: SIHD9N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.8399
  • 500:€0.8629
  • 100:€0.8749
  • 50:€0.8889
  • 25:€1.0009
  • 10:€1.2139
  • 1:€1.7319
SIHD9N60E-GE3
DISTI # 78-SIHD9N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3021
  • 1:$1.9500
  • 10:$1.6200
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 3000:$0.8490
  • 6000:$0.8170
  • 9000:$0.7860
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-252
RoHS: Compliant		2913
  • 1000:$1.5400
  • 500:$1.8600
  • 100:$2.3900
  • 10:$2.9700
  • 1:$3.2800
SIHD9N60E-GE3
DISTI # 2747696		Vishay IntertechnologiesMOSFET, N-CH, 9A, 600V, TO-2522927
  • 500:£0.8050
  • 250:£0.8590
  • 100:£0.9130
  • 10:£1.1800
  • 1:£1.4200
Bild Teil # Beschreibung
FCD260N65S3

Mfr.#: FCD260N65S3

OMO.#: OMO-FCD260N65S3

 MOSFET SUPERFET3 260MOHM TO252
STD11N60DM2

Mfr.#: STD11N60DM2

OMO.#: OMO-STD11N60DM2

 MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
FCD9N60NTM

Mfr.#: FCD9N60NTM

OMO.#: OMO-FCD9N60NTM

 MOSFET 600V N-Channel SupreMOS
STD18N55M5

Mfr.#: STD18N55M5

OMO.#: OMO-STD18N55M5

 MOSFET N-Ch 550V 0.18 13A MDmesh M5 Power MOS
FCD380N60E

Mfr.#: FCD380N60E

OMO.#: OMO-FCD380N60E

 MOSFET 600V N-Channel MOSFET
LM3478MMX/NOPB

Mfr.#: LM3478MMX/NOPB

OMO.#: OMO-LM3478MMX-NOPB

 Switching Controllers Hi Eff Lo-Side N-CH Cntlr
MMB02070C3307FB200

Mfr.#: MMB02070C3307FB200

OMO.#: OMO-MMB02070C3307FB200

 MELF Resistors 1watt .33ohms 1% 0207 MELF 350V 50ppm
FCD360N65S3R0

Mfr.#: FCD360N65S3R0

OMO.#: OMO-FCD360N65S3R0

 MOSFET SUPERFET3 650V 10A 360 mOhm
STD18N55M5

Mfr.#: STD18N55M5

OMO.#: OMO-STD18N55M5-STMICROELECTRONICS

 Darlington Transistors MOSFET N-Ch 550V 0.18 13A Mdmesh V Power MOS
STD11N60DM2

Mfr.#: STD11N60DM2

OMO.#: OMO-STD11N60DM2-STMICROELECTRONICS

 N-CHANNEL 600 V, 0.26 OHM TYP.,
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von SIHD9N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,95 $
1,95 $
10
1,62 $
16,20 $
100
1,25 $
125,00 $
500
1,10 $
550,00 $
1000
0,91 $
911,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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