FCD360N65S3R0

FCD360N65S3R0
Mfr. #:
FCD360N65S3R0
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET SUPERFET3 650V 10A 360 mOhm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCD360N65S3R0 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FCD360N65S3R0 DatasheetFCD360N65S3R0 Datasheet (P4-P6)FCD360N65S3R0 Datasheet (P7-P9)FCD360N65S3R0 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
10 A
Rds On - Drain-Source-Widerstand:
360 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
18 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
83 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
SuperFET3
Marke:
ON Semiconductor
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
34 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
FCD3, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, DPAK
***Components
In a Pack of 10, N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor FCD360N65S3R0
***ical
Trans MOSFET N-CH 650V 10A 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 650V 10A 3-Pin TO-252
***i-Key
SUPERFET3 650V DPAK
***ark
Mosfet, N-Ch, 650V, 10A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 10A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SUPERFET III Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 10A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.31ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:83W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SUPERFET III Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
FCD360N65S3R0
DISTI # V72:2272_21690276
ON SemiconductorN-Channel MOSFET2488
  • 1000:$0.5807
  • 500:$0.7418
  • 250:$0.8560
  • 100:$0.8911
  • 25:$1.0716
  • 10:$1.1907
  • 1:$1.4601
FCD360N65S3R0
DISTI # V36:1790_21690276
ON SemiconductorN-Channel MOSFET0
  • 2500000:$0.5002
  • 1250000:$0.5006
  • 250000:$0.5410
  • 25000:$0.6180
  • 2500:$0.6312
FCD360N65S3R0
DISTI # FCD360N65S3R0OSCT-ND
ON SemiconductorSUPERFET3 650V DPAK
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)
2371In Stock
  • 1000:$0.6966
  • 500:$0.8823
  • 100:$1.0681
  • 10:$1.3700
  • 1:$1.5300
FCD360N65S3R0
DISTI # FCD360N65S3R0OSDKR-ND
ON SemiconductorSUPERFET3 650V DPAK
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®
2371In Stock
  • 1000:$0.6966
  • 500:$0.8823
  • 100:$1.0681
  • 10:$1.3700
  • 1:$1.5300
FCD360N65S3R0
DISTI # FCD360N65S3R0OSTR-ND
ON SemiconductorSUPERFET3 650V DPAK
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 12500:$0.5771
  • 5000:$0.5997
  • 2500:$0.6312
FCD360N65S3R0
DISTI # 31966752
ON SemiconductorN-Channel MOSFET2488
  • 12:$1.4601
FCD360N65S3R0
DISTI # FCD360N65S3R0
ON SemiconductorTrans MOSFET N-CH 650V 10A 3-Pin TO-252 (Alt: FCD360N65S3R0)
RoHS: Compliant
Min Qty: 2500
Europe - 0
  • 25000:€0.5439
  • 15000:€0.5859
  • 10000:€0.6339
  • 5000:€0.6919
  • 2500:€0.8459
FCD360N65S3R0
DISTI # FCD360N65S3R0
ON SemiconductorTrans MOSFET N-CH 650V 10A 3-Pin TO-252 - Tape and Reel (Alt: FCD360N65S3R0)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.5299
  • 15000:$0.5429
  • 10000:$0.5499
  • 5000:$0.5569
  • 2500:$0.5609
FCD360N65S3R0
DISTI # FCD360N65S3R0
ON SemiconductorTrans MOSFET N-CH 650V 10A 3-Pin TO-252 (Alt: FCD360N65S3R0)
RoHS: Compliant
Min Qty: 2500
Asia - 0
  • 125000:$0.7039
  • 62500:$0.7157
  • 25000:$0.7403
  • 12500:$0.7668
  • 7500:$0.7952
  • 5000:$0.8258
  • 2500:$0.8588
FCD360N65S3R0
DISTI # 62AC6858
ON SemiconductorMOSFET, N-CH, 650V, 10A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes2485
  • 1000:$0.6500
  • 500:$0.8230
  • 250:$0.8780
  • 100:$0.9320
  • 50:$1.0300
  • 25:$1.1200
  • 10:$1.2100
  • 1:$1.4100
FCD360N65S3R0
DISTI # 863-FCD360N65S3R0
ON SemiconductorMOSFET SUPERFET3 650V 10A 360 mOhm
RoHS: Compliant
2073
  • 1:$1.4000
  • 10:$1.2000
  • 100:$0.9230
  • 500:$0.8150
  • 1000:$0.6440
  • 2500:$0.5710
  • 10000:$0.5490
FCD360N65S3R0
DISTI # 1784238
ON SemiconductorSUPERFET3 650V DPAK, RL2500
  • 7500:£0.4700
  • 2500:£0.5020
FCD360N65S3R0
DISTI # 2895704
ON SemiconductorMOSFET, N-CH, 650V, 10A, TO-2522490
  • 500:£0.5910
  • 250:£0.6300
  • 100:£0.6690
  • 10:£0.9220
  • 1:£1.1600
FCD360N65S3R0
DISTI # 2895704
ON SemiconductorMOSFET, N-CH, 650V, 10A, TO-252
RoHS: Compliant
2485
  • 5000:$0.9090
  • 1000:$0.9650
  • 500:$1.0500
  • 250:$1.2800
  • 100:$1.5500
  • 25:$2.2800
  • 5:$2.6500
Bild Teil # Beschreibung
FCD260N65S3

Mfr.#: FCD260N65S3

OMO.#: OMO-FCD260N65S3

MOSFET SUPERFET3 260MOHM TO252
SIHD6N80E-GE3

Mfr.#: SIHD6N80E-GE3

OMO.#: OMO-SIHD6N80E-GE3

MOSFET 800V Vds 30V Vgs DPAK (TO-252)
RC0402JR-13330RL

Mfr.#: RC0402JR-13330RL

OMO.#: OMO-RC0402JR-13330RL-433

Res Thick Film 0402 330 Ohm 5% 0.063W(1/16W) ±100ppm/C Molded SMD Paper T/R
FCD260N65S3

Mfr.#: FCD260N65S3

OMO.#: OMO-FCD260N65S3-ON-SEMICONDUCTOR

MOSFET N-CH 260MOHM TO252
TAJD227M016RNJV

Mfr.#: TAJD227M016RNJV

OMO.#: OMO-TAJD227M016RNJV-AVX

CAP TANT 220UF 20% 16V 2917
SIHD6N80E-GE3

Mfr.#: SIHD6N80E-GE3

OMO.#: OMO-SIHD6N80E-GE3-VISHAY

MOSFET N-CHAN 800V TO-252
TL6330AF200Q

Mfr.#: TL6330AF200Q

OMO.#: OMO-TL6330AF200Q-E-SWITCH

SMT MINIATURE IP67 2.80MM X 4.60
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von FCD360N65S3R0 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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