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CY7C1613KV18-300BZI

CY7C1613KV18-300BZI
Mfr. #:
CY7C1613KV18-300BZI
Hersteller:
Cypress Semiconductor
Beschreibung:
SRAM 144Mb 1.8V 300Mhz 8M x 18 QDR II SRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CY7C1613KV18-300BZI Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CY7C1613KV18-300BZI Mehr Informationen CY7C1613KV18-300BZI Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
SRAM
RoHS:
N
Speichergröße:
144 Mbit
Organisation:
8 M x 18
Zugriffszeit:
-
Maximale Taktfrequenz:
300 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
710 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
FBGA-165
Verpackung:
Tablett
Speichertyp:
Flüchtig
Serie:
CY7C1613KV18
Typ:
Synchron
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
105
Unterkategorie:
Speicher & Datenspeicherung
Tags
CY7C1613, CY7C161, CY7C16, CY7C1, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
SRAM Chip Sync Dual 1.8V 144M-bit 8M x 18 0.45ns 165-Pin FBGA Tray
***i-Key
IC SRAM 144M PARALLEL 165FBGA
***ark
TRAY / Sync SRAMs
Cypress QDR-II DDR-II Sync SRAM
Cypress QDR-II is a high performance, dual-port SRAM memory. QDR-II SRAM offers a maximum speed of 333 MHz, densities up to 144 Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Bild Teil # Beschreibung
CY7C1613KV18-300BZXC

Mfr.#: CY7C1613KV18-300BZXC

OMO.#: OMO-CY7C1613KV18-300BZXC

 SRAM 144Mb 1.8V 300Mhz 8M x 18 QDR II SRAM
CY7C1613KV18-333BZXC

Mfr.#: CY7C1613KV18-333BZXC

OMO.#: OMO-CY7C1613KV18-333BZXC

 SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
CY7C1613KV18-300BZI

Mfr.#: CY7C1613KV18-300BZI

OMO.#: OMO-CY7C1613KV18-300BZI

 SRAM 144Mb 1.8V 300Mhz 8M x 18 QDR II SRAM
CY7C1613KV18-300BZI

Mfr.#: CY7C1613KV18-300BZI

OMO.#: OMO-CY7C1613KV18-300BZI-CYPRESS-SEMICONDUCTOR

 Neu und Original
CY7C1613KV18-333BZXC

Mfr.#: CY7C1613KV18-333BZXC

OMO.#: OMO-CY7C1613KV18-333BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 144Mb 1.8V 333Mhz 8M x 18 QDR II SRAM
CY7C1613KV18-300BZXC

Mfr.#: CY7C1613KV18-300BZXC

OMO.#: OMO-CY7C1613KV18-300BZXC-CYPRESS-SEMICONDUCTOR

 SRAM 144Mb 1.8V 300Mhz 8M x 18 QDR II SRAM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von CY7C1613KV18-300BZI dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
105
215,75 $
22 653,75 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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