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IPT60R150G7XTMA1

IPT60R150G7XTMA1
Mfr. #:
IPT60R150G7XTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPT60R150G7XTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPT60R150G7XTMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
HSOF-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
17 A
Rds On - Drain-Source-Widerstand:
129 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
23 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
106 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
CoolMOS G7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
56 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
IPT60R150G7 SP001579346
Tags
IPT60R1, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
MOSFET, N-CH, 600V, 17A, 106W, HSOF
***ark
Mosfet, N-Ch, 600V, 17A, 106W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.129Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
Teil # Mfg. Beschreibung Aktie Preis
IPT60R150G7XTMA1
DISTI # V36:1790_16563206		Infineon Technologies AGHIGH POWER_NEW0
  • 2000000:$1.5110
  • 1000000:$1.5130
  • 200000:$1.6190
  • 20000:$1.7850
  • 2000:$1.8120
IPT60R150G7XTMA1
DISTI # V72:2272_16563206		Infineon Technologies AGHIGH POWER_NEW0
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 17A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1799In Stock
    • 1000:$1.9641
    • 500:$2.3289
    • 100:$2.7357
    • 10:$3.3390
    • 1:$3.7200
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 17A HSOF-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1799In Stock
    • 1000:$1.9641
    • 500:$2.3289
    • 100:$2.7357
    • 10:$3.3390
    • 1:$3.7200
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 17A HSOF-8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2000:$1.8115
    IPT60R150G7XTMA1
    DISTI # IPT60R150G7XTMA1    		Infineon Technologies AGTrans MOSFET N 650V 17A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT60R150G7XTMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 12000:$1.5900
    • 20000:$1.5900
    • 8000:$1.6900
    • 2000:$1.7900
    • 4000:$1.7900
    IPT60R150G7XTMA1
    DISTI # SP001579346    		Infineon Technologies AGTrans MOSFET N 650V 17A 8-Pin HSOF T/R (Alt: SP001579346)
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape and Reel    		Europe - 0
    • 20000:€1.4900
    • 8000:€1.5900
    • 12000:€1.5900
    • 4000:€1.7900
    • 2000:€2.2900
    IPT60R150G7XTMA1
    DISTI # 84AC6844    		Infineon Technologies AGMOSFET, N-CH, 600V, 17A, 106W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2385
    • 1000:$1.8300
    • 500:$2.1700
    • 250:$2.4200
    • 100:$2.5600
    • 50:$2.6800
    • 25:$2.8100
    • 10:$2.9400
    • 1:$3.4600
    IPT60R150G7XTMA1
    DISTI # 726-IPT60R150G7XTMA1    		Infineon Technologies AGMOSFET HIGH POWER NEW
    RoHS: Compliant    		1816
    • 1:$3.4300
    • 10:$2.9100
    • 100:$2.5300
    • 250:$2.4000
    • 500:$2.1500
    • 1000:$1.8100
    • 2000:$1.7200
    • 4000:$1.6600
    IPT60R150G7XTMA1
    DISTI # 2983374    		Infineon Technologies AGMOSFET, N-CH, 600V, 17A, 106W, HSOF
    RoHS: Compliant    		2385
    • 1000:$2.6000
    • 500:$2.8200
    • 250:$3.1400
    • 100:$3.3000
    • 10:$3.8000
    • 1:$5.0300
    IPT60R150G7XTMA1
    DISTI # 2983374    		Infineon Technologies AGMOSFET, N-CH, 600V, 17A, 106W, HSOF2385
    • 500:£1.5600
    • 250:£1.7400
    • 100:£1.8300
    • 10:£2.1100
    • 1:£2.7900
    Bild Teil # Beschreibung
    1EDI20N12AFXUMA1

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    OMO.#: OMO-1EDI20N12AFXUMA1

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    STP24N60M6

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    OMO.#: OMO-STP24N60M6

    		 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220 package
    STO33N60M6

    Mfr.#: STO33N60M6

    OMO.#: OMO-STO33N60M6

    		 MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-LL package
    VS-1EFU06HM3/I

    Mfr.#: VS-1EFU06HM3/I

    OMO.#: OMO-VS-1EFU06HM3-I

    		 Rectifiers If(AV) 1A Vr 600V AEC-Q101 Qualified
    BSC050NE2LS

    Mfr.#: BSC050NE2LS

    OMO.#: OMO-BSC050NE2LS

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    IPB50R140CPATMA1

    Mfr.#: IPB50R140CPATMA1

    OMO.#: OMO-IPB50R140CPATMA1

    		 MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP
    STB24N60M6

    Mfr.#: STB24N60M6

    OMO.#: OMO-STB24N60M6

    		 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
    1EDI20N12AFXUMA1

    Mfr.#: 1EDI20N12AFXUMA1

    OMO.#: OMO-1EDI20N12AFXUMA1-INFINEON-TECHNOLOGIES

    		 Gate Drivers DRIVER IC
    STP24N60M6

    Mfr.#: STP24N60M6

    OMO.#: OMO-STP24N60M6-STMICROELECTRONICS

    		 NCHANNEL 600 V 105 MOHM TYP. 22
    BSC050NE2LS

    Mfr.#: BSC050NE2LS

    OMO.#: OMO-BSC050NE2LS-1190

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IPT60R150G7XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,43 $
    3,43 $
    10
    2,91 $
    29,10 $
    100
    2,53 $
    253,00 $
    250
    2,40 $
    600,00 $
    500
    2,15 $
    1 075,00 $
    1000
    1,81 $
    1 810,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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