IPT60

IPT60R028G7XTMA1 vs IPT60R040S7XTMA1 vs IPT60R022S7XTMA1

 
PartNumberIPT60R028G7XTMA1IPT60R040S7XTMA1IPT60R022S7XTMA1
DescriptionMOSFET HIGH POWER NEWMOSFETMOSFET
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOF-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current75 A--
Rds On Drain Source Resistance28 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge123 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation391 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReelReel
SeriesCoolMOS G7--
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time2.8 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns--
Factory Pack Quantity200020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time28 ns--
Part # AliasesIPT60R028G7 SP001579312IPT60R040S7 SP003393022IPT60R022S7 SP003330410
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPT60R102G7XTMA1 MOSFET HIGH POWER NEW
IPT60R028G7XTMA1 MOSFET HIGH POWER NEW
IPT60R050G7XTMA1 MOSFET HIGH POWER_NEW
IPT60R125G7XTMA1 MOSFET HIGH POWER NEW
IPT60R080G7XTMA1 MOSFET HIGH POWER_NEW
IPT60R150G7XTMA1 MOSFET HIGH POWER NEW
IPT60R065S7XTMA1 MOSFET
IPT60R040S7XTMA1 MOSFET
IPT60R022S7XTMA1 MOSFET
IPT60R050G7XTMA1 MOSFET N-CH 650V 44A HSOF-8
IPT60R080G7XTMA1 MOSFET N-CH 650V 29A HSOF-8
IPT60R125G7XTMA1 MOSFET N-CH 650V 20A HSOF-8
IPT60R028G7XTMA1 MOSFET N-CH 600V 75A HSOF-8
IPT60R102G7XTMA1 MOSFET N-CH 650V 23A HSOF-8
IPT60R150G7XTMA1 MOSFET N-CH 650V 17A HSOF-8
IPT60R050G7XTMA1-CUT TAPE Neu und Original
IPT60R080G7XTMA1 60R080G7 Neu und Original
IPT60R028G7XTMA1 60R028G7 Neu und Original
IPT60R028G7 Neu und Original
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