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IPT60R080G7XTMA1

IPT60R080G7XTMA1
Mfr. #:
IPT60R080G7XTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 650V 29A HSOF-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPT60R080G7XTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPT60R080G7XTMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPT60R0, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
MOSFET, N-CH, 600V, 29A, 167W, HSOF
***ark
Mosfet, N-Ch, 600V, 29A, 167W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPT60R080G7XTMA1
DISTI # V72:2272_17076899		Infineon Technologies AGIPT60R080G7XTMA10
    IPT60R080G7XTMA1
    DISTI # V36:1790_17076899    		Infineon Technologies AGIPT60R080G7XTMA10
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1CT-ND      		Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		2859In Stock
      • 1000:$3.7988
      • 500:$4.3616
      • 100:$5.0088
      • 10:$6.0500
      • 1:$6.7000
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		2859In Stock
      • 1000:$3.7988
      • 500:$4.3616
      • 100:$5.0088
      • 10:$6.0500
      • 1:$6.7000
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 2000
      Container: Tape & Reel (TR)      		2000In Stock
      • 2000:$3.6427
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1      		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPT60R080G7XTMA1)
      RoHS: Compliant
      Min Qty: 2000
      Container: Reel      		Americas - 0
      • 12000:$3.2900
      • 20000:$3.2900
      • 8000:$3.3900
      • 4000:$3.5900
      • 2000:$3.6900
      IPT60R080G7XTMA1
      DISTI # 84AC6841      		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2298
      • 1000:$3.5500
      • 500:$4.0700
      • 250:$4.4600
      • 100:$4.6800
      • 50:$5.0300
      • 25:$5.3800
      • 10:$5.6500
      • 1:$6.2500
      IPT60R080G7XTMA1
      DISTI # 726-IPT60R080G7XTMA1      		Infineon Technologies AGMOSFET HIGH POWER_NEW
      RoHS: Compliant      		1680
      • 1:$6.1900
      • 10:$5.5900
      • 25:$5.3300
      • 100:$4.6300
      • 250:$4.4200
      • 500:$4.0300
      • 1000:$3.5100
      • 2000:$3.3800
      IPT60R080G7XTMA1
      DISTI # 2983371      		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF2298
      • 500:£2.9600
      • 250:£3.2300
      • 100:£3.3800
      • 10:£3.9000
      • 1:£5.0100
      IPT60R080G7XTMA1
      DISTI # 2983371      		Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF
      RoHS: Compliant      		2298
      • 250:$5.2100
      • 100:$5.4700
      • 25:$6.1500
      • 1:$7.0200
      Bild Teil # Beschreibung
      IPT60R080G7XTMA1

      Mfr.#: IPT60R080G7XTMA1

      OMO.#: OMO-IPT60R080G7XTMA1

      		 MOSFET HIGH POWER_NEW
      IPT60R080G7XTMA1

      Mfr.#: IPT60R080G7XTMA1

      OMO.#: OMO-IPT60R080G7XTMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 29A HSOF-8
      IPT60R080G7XTMA1 60R080G7

      Mfr.#: IPT60R080G7XTMA1 60R080G7

      OMO.#: OMO-IPT60R080G7XTMA1-60R080G7-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von IPT60R080G7XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,53 $
      4,53 $
      10
      4,30 $
      42,99 $
      100
      4,07 $
      407,30 $
      500
      3,85 $
      1 923,35 $
      1000
      3,62 $
      3 620,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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