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IXTH30N50P

IXTH30N50P
Mfr. #:
IXTH30N50P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTH30N50P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH30N50P DatasheetIXTH30N50P Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
165 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
70 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
460 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PolarHV
Verpackung:
Rohr
Höhe:
21.46 mm
Länge:
16.26 mm
Serie:
IXTH30N50
Transistortyp:
1 N-Channel
Typ:
PolarHV Leistungs-MOSFET
Breite:
5.3 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
17 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
25 ns
Gewichtseinheit:
0.229281 oz
Tags
IXTH30N5, IXTH30N, IXTH30, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 30A 3-Pin (3+Tab) TO-247AD
***i-Key
MOSFET N-CH 500V 30A TO247
***el Nordic
Contact for details
***p One Stop Global
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 600V 25A TO247
***S
French Electronic Distributor since 1988
***el Electronic
IC SUPERVISOR
***icroelectronics
N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
***ure Electronics
N-Channel 600 V 0.175 Ohm Flange Mount Power Mosfet - TO-247
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Magazine
***
POWER MOSFET TRANSISTOR
***i-Key
MOSFET N-CH 600V 25A TO247
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), N-Channel, Metal-oxide Semiconductor FET
***nell
SUPERFET2 650V, 150 MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Powe
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247
***roFlash
Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Teil # Mfg. Beschreibung Aktie Preis
IXTH30N50P
DISTI # IXTH30N50P-ND		IXYS CorporationMOSFET N-CH 500V 30A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.6377
IXTH30N50P
DISTI # 747-IXTH30N50P		IXYS CorporationMOSFET 30.0 Amps 500 V 0.2 Ohm Rds
RoHS: Compliant		0
  • 1:$8.0400
  • 10:$7.1900
  • 25:$6.2500
  • 50:$6.1300
  • 100:$5.8900
  • 250:$5.0300
  • 500:$4.7700
  • 1000:$4.0300
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Verfügbarkeit
Aktie:
100
Auf Bestellung:
2083
Menge eingeben:
Der aktuelle Preis von IXTH30N50P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
8,04 $
8,04 $
10
7,19 $
71,90 $
25
6,25 $
156,25 $
50
6,13 $
306,50 $
100
5,89 $
589,00 $
250
5,03 $
1 257,50 $
500
4,77 $
2 385,00 $
1000
4,03 $
4 030,00 $
2500
3,45 $
8 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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