IXTH30N5

IXTH30N50L2 vs IXTH30N50 vs IXTH30N50L

 
PartNumberIXTH30N50L2IXTH30N50IXTH30N50L
DescriptionMOSFET 30.0 Amps 500V 0.002 RdsMOSFET 30 Amps 500V 0.17 RdsMOSFET 30 Amps 500V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V500 V
Id Continuous Drain Current30 A30 A30 A
Rds On Drain Source Resistance200 mOhms170 mOhms200 mOhms
Vgs th Gate Source Threshold Voltage4.5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge240 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation400 W360 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameLinear L2--
PackagingTubeTubeTube
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXTH30N50IXTH30N50IXTH30N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeLinear L2 Power MOSFET--
Width5.3 mm5.3 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min9 S--
Fall Time40 ns26 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time117 ns42 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time94 ns110 ns-
Typical Turn On Delay Time35 ns35 ns-
Unit Weight0.229281 oz0.229281 oz0.229281 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTH30N50L2 MOSFET 30.0 Amps 500V 0.002 Rds
IXTH30N50P MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
IXTH30N50 MOSFET 30 Amps 500V 0.17 Rds
IXTH30N50L MOSFET 30 Amps 500V
IXTH30N50L2 MOSFET N-CH 500V 30A TO-247
IXTH30N50P Darlington Transistors MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
IXTH30N50 MOSFET 30 Amps 500V 0.17 Rds
IXTH30N50L MOSFET 30 Amps 500V
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