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FDMS2672

FDMS2672
Mfr. #:
FDMS2672
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 200V N-Ch UltraFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS2672 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMS2672 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
77 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
UltraFET
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
6 mm
Serie:
FDMS2672
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
14 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
36 ns
Typische Einschaltverzögerungszeit:
22 ns
Gewichtseinheit:
0.007408 oz
Tags
FDMS2, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***r
    G***r
    FR

    Fast shipping and packaging very clean, but not test everything. I recommend it.

    2019-04-07
    A***v
    A***v
    RU

    Quite fast delivery. Quality looks very good, but haven't tested yet. It's very well packed with a soldered breakable pin header.

    2019-01-24
    D***t
    D***t
    JP

    Excellent Seller.Good packaging and Very fast shipping.Recommended.

    2019-01-28
    S***n
    S***n
    RU

    Good fees, thanks to the seller.

    2019-07-02
***emi
N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
***ure Electronics
FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:3.7A; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):64mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V
***rchild Semiconductor
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
***nell
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3.7A; Resistance, Rds On:0.077ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS2672; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDMS2672
DISTI # FDMS2672CT-ND		ON SemiconductorMOSFET N-CH 200V 3.7A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		737In Stock
  • 1000:$0.9857
  • 500:$1.1897
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
FDMS2672
DISTI # FDMS2672DKR-ND		ON SemiconductorMOSFET N-CH 200V 3.7A POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		737In Stock
  • 1000:$0.9857
  • 500:$1.1897
  • 100:$1.5296
  • 10:$1.9030
  • 1:$2.1100
FDMS2672
DISTI # FDMS2672TR-ND		ON SemiconductorMOSFET N-CH 200V 3.7A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.8910
FDMS2672
DISTI # FDMS2672		ON SemiconductorTrans MOSFET N-CH 200V 3.7A 8-Pin MLP EP T/R (Alt: FDMS2672)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.7089
  • 6000:€0.7069
  • 12000:€0.7049
  • 18000:€0.7019
  • 30000:€0.6999
FDMS2672
DISTI # FDMS2672		ON SemiconductorTrans MOSFET N-CH 200V 3.7A 8-Pin MLP EP T/R - Tape and Reel (Alt: FDMS2672)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7839
  • 6000:$0.7789
  • 12000:$0.7689
  • 18000:$0.7589
  • 30000:$0.7399
FDMS2672
DISTI # FDMS2672		ON SemiconductorTrans MOSFET N-CH 200V 3.7A 8-Pin MLP EP T/R (Alt: FDMS2672)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.7461
  • 6000:$0.7174
  • 9000:$0.6908
  • 15000:$0.6662
  • 30000:$0.6432
  • 75000:$0.6218
  • 150000:$0.6116
FDMS2672
DISTI # 30M0741		ON SemiconductorN CHANNEL MOSFET, 200V, 3.7A, POWER 56, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.064ohm,Rds(on) Test Voltage Vgs:20V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.7800
  • 9000:$0.7500
FDMS2672Fairchild Semiconductor CorporationPower Field-Effect Transistor, 3.7A I(D), 200V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		72957
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FDMS2672Fairchild Semiconductor Corporation3.7 A, 200 V, 0.156 ohm, N-CHANNEL, Si, POWER, MOSFET125
  • 112:$1.2150
  • 43:$1.3500
  • 1:$2.7000
FDMS2672Fairchild Semiconductor Corporation 1496
    FDMS2672
    DISTI # 7599594P    		ON SemiconductorMOSFET N-CH 200V 3.7A ULTRAFET MLP8EP, RL2034
    • 10:£0.8100
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    		 CAN Interface IC 5KV Isolated CAN
    SQJA20EP-T1_GE3

    Mfr.#: SQJA20EP-T1_GE3

    OMO.#: OMO-SQJA20EP-T1-GE3

    		 MOSFET 200V Vds -/+20V Vgs AEC-Q101 Qualified
    SIDR622DP-T1-GE3

    Mfr.#: SIDR622DP-T1-GE3

    OMO.#: OMO-SIDR622DP-T1-GE3

    		 MOSFET 150V Vds 20V Vgs PowerPAK SO-8DC
    BSC019N06NSATMA1

    Mfr.#: BSC019N06NSATMA1

    OMO.#: OMO-BSC019N06NSATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    NCP431AVSNT1G

    Mfr.#: NCP431AVSNT1G

    OMO.#: OMO-NCP431AVSNT1G

    		 Voltage References ANA 2.5V PROG SHUNT REF
    CI100505-68NJ

    Mfr.#: CI100505-68NJ

    OMO.#: OMO-CI100505-68NJ

    		 Fixed Inductors 68nH 5% MultiLayer High Frequency
    ESP32-WROOM-32

    Mfr.#: ESP32-WROOM-32

    OMO.#: OMO-ESP32-WROOM-32

    		 WiFi Modules (802.11) SMD Module, ESP32-D0WDQ6, 32Mbits SPI flash, UART
    INN3368C-H301-TL

    Mfr.#: INN3368C-H301-TL

    OMO.#: OMO-INN3368C-H301-TL

    		 AC/DC Converters Off-Line CV/CC 650V 55W 30mW 65kHz 2.96A
    ESP32-WROOM-32

    Mfr.#: ESP32-WROOM-32

    OMO.#: OMO-ESP32-WROOM-32-ESPRESSIF-SYSTEMS

    		 SMD MODULE, ESP32-D0WDQ6, 32MBIT
    SIDR622DP-T1-GE3

    Mfr.#: SIDR622DP-T1-GE3

    OMO.#: OMO-SIDR622DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 150V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von FDMS2672 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,77 $
    1,77 $
    10
    1,50 $
    15,00 $
    100
    1,20 $
    120,00 $
    500
    1,06 $
    530,00 $
    1000
    0,87 $
    870,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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