STGWA8M120DF3

STGWA8M120DF3
Mfr. #:
STGWA8M120DF3
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWA8M120DF3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWA8M120DF3 Mehr Informationen STGWA8M120DF3 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
1.85 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
16 A
Pd - Verlustleistung:
167 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGWA8M120DF3
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Tags
STGWA8, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current:16A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
STGWA8M120DF3
DISTI # STGWA8M120DF3-ND
STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube
Temporarily Out of Stock
  • 600:$2.3531
STGWA8M120DF3
DISTI # STGWA8M120DF3
STMicroelectronicsSTMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
Min Qty: 600
Container: Tray
Americas - 0
  • 3000:$1.5900
  • 6000:$1.5900
  • 600:$1.6900
  • 1200:$1.6900
  • 1800:$1.6900
STGWA8M120DF3
DISTI # 14AC7542
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes70
  • 500:$2.2700
  • 250:$2.5300
  • 100:$2.6700
  • 50:$2.8000
  • 25:$2.9400
  • 10:$3.0700
  • 1:$3.6200
STGWA8M120DF3
DISTI # 511-STGWA8M120DF3
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss0
  • 1:$3.5800
  • 10:$3.0400
  • 100:$2.6400
  • 250:$2.5000
  • 500:$2.2500
  • 1000:$1.8900
  • 2500:$1.8000
STGWA8M120DF3
DISTI # IGBT2612
STMicroelectronicsIGBT 1200V8A 1,85VTO-247 LLStock DE - 0Stock HK - 0Stock US - 0
  • 600:$2.0100
STGWA8M120DF3
DISTI # 2729672
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3
RoHS: Compliant
70
  • 1000:$2.8400
  • 500:$3.0500
  • 250:$3.4300
  • 100:$3.8100
  • 10:$4.3000
  • 1:$4.9300
STGWA8M120DF3
DISTI # 2729672
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-370
  • 500:£1.7400
  • 250:£1.9400
  • 100:£2.0600
  • 10:£2.3700
  • 1:£3.1300
Bild Teil # Beschreibung
STGWA80H65FB

Mfr.#: STGWA80H65FB

OMO.#: OMO-STGWA80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWA8M120DF3

Mfr.#: STGWA8M120DF3

OMO.#: OMO-STGWA8M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGWA80H65DFB

Mfr.#: STGWA80H65DFB

OMO.#: OMO-STGWA80H65DFB

IGBT Transistors IGBT & Power Bipolar
STGWA80H65FB

Mfr.#: STGWA80H65FB

OMO.#: OMO-STGWA80H65FB-STMICROELECTRONICS

IGBT 650V 120A 469W TO247
STGWA8M120DF3

Mfr.#: STGWA8M120DF3

OMO.#: OMO-STGWA8M120DF3-STMICROELECTRONICS

STMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
STGWA80H65DFB

Mfr.#: STGWA80H65DFB

OMO.#: OMO-STGWA80H65DFB-STMICROELECTRONICS

IGBT BIPO 650V 80A TO247-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von STGWA8M120DF3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,58 $
3,58 $
10
3,04 $
30,40 $
100
2,64 $
264,00 $
250
2,50 $
625,00 $
500
2,25 $
1 125,00 $
1000
1,89 $
1 890,00 $
2500
1,80 $
4 500,00 $
5000
1,73 $
8 650,00 $
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