STGWA80H65DFB

STGWA80H65DFB
Mfr. #:
STGWA80H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT BIPO 650V 80A TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWA80H65DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWA80H65DFB Mehr Informationen STGWA80H65DFB Product Details
Produkteigenschaft
Attributwert
Tags
STGWA8, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***ronik
IGBT 650V 80A 1,8V TO247 long D
***i-Key
IGBT BIPO 650V 80A TO247-3
***ark
Ptd High Voltage
Teil # Mfg. Beschreibung Aktie Preis
STGWA80H65DFB
DISTI # V99:2348_17623314
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
596
  • 100:$5.4760
  • 10:$6.6700
  • 1:$8.1972
STGWA80H65DFB
DISTI # 497-16007-5-ND
STMicroelectronicsIGBT BIPO 650V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
262In Stock
  • 120:$5.6070
  • 30:$6.4577
  • 1:$7.5000
STGWA80H65DFB
DISTI # 25947925
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
596
  • 2:$8.1972
STGWA80H65DFB
DISTI # 511-STGWA80H65DFB
STMicroelectronicsIGBT Transistors IGBT & Power Bipolar
RoHS: Compliant
192
  • 1:$7.1400
  • 10:$6.4600
  • 25:$6.1600
  • 100:$5.3400
  • 250:$5.1100
  • 500:$4.6500
  • 1000:$4.0600
STGWA80H65DFB
DISTI # IGBT1888
STMicroelectronicsIGBT 650V 80A 1,8V TO247 long D
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$4.7500
STGWA80H65DFBSTMicroelectronicsInsulated Gate Bipolar Transistor
RoHS: Compliant
600
    Bild Teil # Beschreibung
    STGWA80H65FB

    Mfr.#: STGWA80H65FB

    OMO.#: OMO-STGWA80H65FB

    IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
    STGWA8M120DF3

    Mfr.#: STGWA8M120DF3

    OMO.#: OMO-STGWA8M120DF3

    IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
    STGWA80H65DFB

    Mfr.#: STGWA80H65DFB

    OMO.#: OMO-STGWA80H65DFB

    IGBT Transistors IGBT & Power Bipolar
    STGWA80H65FB

    Mfr.#: STGWA80H65FB

    OMO.#: OMO-STGWA80H65FB-STMICROELECTRONICS

    IGBT 650V 120A 469W TO247
    STGWA8M120DF3

    Mfr.#: STGWA8M120DF3

    OMO.#: OMO-STGWA8M120DF3-STMICROELECTRONICS

    STMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
    STGWA80H65DFB

    Mfr.#: STGWA80H65DFB

    OMO.#: OMO-STGWA80H65DFB-STMICROELECTRONICS

    IGBT BIPO 650V 80A TO247-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von STGWA80H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,00 $
    0,00 $
    10
    0,00 $
    0,00 $
    100
    0,00 $
    0,00 $
    500
    0,00 $
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    1000
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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