SIA923EDJ-T1-GE3

Mfr. #:: SIA923EDJ-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET 2P-CH 20V 4.5A SC-70-6
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIA923EDJ-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIA923EDJ-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Arrays

Serie: GrabenFETR

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SIA923EDJ-GE3

Gewichtseinheit: 0.000988 oz

Montageart: SMD/SMT

Paket-Koffer: PowerPAKR SC-70-6 Dual

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: PowerPAKR SC-70-6 Dual

Aufbau: Dual

FET-Typ: 2 P-Channel (Dual)

Leistung max: 7.8W

Transistor-Typ: 2 P-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 4.5A

Rds-On-Max-Id-Vgs: 54 mOhm @ 3.8A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Lade-Qg-Vgs: 25nC @ 8V

Pd-Verlustleistung: 1.9 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Vgs-Gate-Source-Spannung: 8 V

ID-Dauer-Drain-Strom: - 4.5 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Rds-On-Drain-Source-Widerstand: 54 mOhms

Transistor-Polarität: P-Kanal

Qg-Gate-Ladung: 16.3 nC

Vorwärts-Transkonduktanz-Min: 11 S

Tags: SIA923EDJ-T1, SIA923E, SIA923, SIA92, SIA9, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA923EDJ-T1-GE3 Beschreibung

***ark: MOSFET, DUAL P-CH, -20V, POWERPAK SC70-6; Transistor Polarity:Dual P Channel; Co

***ied Electronics & Automation: SIA923EDJ-T1-GE3 Dual P-channel MOSFET Transistor; 4.5 A; 20 V; 6-Pin SC-70

***ure Electronics: SiA923EDJ Series Dual P Channel 20 V 0.054 Ohm 7.8 W Mosfet - PowerPAK SC-70-6

***Components: Supplied as a Tape, Dual P-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay SIA923EDJ-T1-GE3

***p One Stop Global: Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R

***i-Key: MOSFET 2P-CH 20V 4.5A SC-70-6

***ronik: Dual P-CH 20V 4,5A SC-70-6

***: DUAL P-CHANNEL 20-V (D-S)

SIA923EDJ-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

SiA923EDJ TrenchFET® Power MOSFETs: Vishay Siliconix SiA923EDJ dual 20V p-channel TrenchFET® Gen III power MOSFETs with an 8V gate-to-source voltage feature the lowest on-resistance for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. Vishay Siliconix SiA923EDJ TrenchFET Gen III power MOSFETs are designed for use in DC-to-DC converters as well as load switches in handheld devices, such as smartphones, MP3 players, table PCs, and eBooks. The lower on-resistance of the SiA923EDJ translates into lower conduction losses, saving power and prolonging battery life between charges. The on-resistance ratings down to 1.5V allow SiA923EDJ power MOSFETs to work with the lower-voltage gate drives and lower bus voltages common in handheld devices without the space and cost of level-shifting circuitry. The ultra-low on-resistance of this Vishay Siliconix power MOSFET is up to 12% lower than the closest competing p-channel device.Learn More View entire Vishay Siliconix Power MOSFET line

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIA923EDJ-T1-GE3 DISTI # V72:2272_09216860	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	1670	1000:$0.2311 500:$0.2794 250:$0.3286 100:$0.3322 25:$0.4127 10:$0.4176 1:$0.4969
SIA923EDJ-T1-GE3 DISTI # SIA923EDJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	108In Stock	1000:$0.2937 500:$0.3671 100:$0.4956 10:$0.6420 1:$0.7300
SIA923EDJ-T1-GE3 DISTI # SIA923EDJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	108In Stock	1000:$0.2937 500:$0.3671 100:$0.4956 10:$0.6420 1:$0.7300
SIA923EDJ-T1-GE3 DISTI # SIA923EDJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2584
SIA923EDJ-T1-GE3 DISTI # 30157333	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	6000	3000:$0.2268
SIA923EDJ-T1-GE3 DISTI # 27088794	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	1670	1000:$0.2311 500:$0.2794 250:$0.3286 100:$0.3322 31:$0.4127
SIA923EDJ-T1-GE3 DISTI # SIA923EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA923EDJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2349 6000:$0.2279 12000:$0.2189 18000:$0.2129 30000:$0.2069
SIA923EDJ-T1-GE3 DISTI # SIA923EDJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA923EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	3000:$0.2162 6000:$0.1663 9000:$0.1324 15000:$0.1118 30000:$0.1029 75000:$0.0998 150000:$0.0968
SIA923EDJ-T1-GE3 DISTI # 86R3790	Vishay Intertechnologies	MOSFET, DUAL P-CH, -20V, POWERPAK SC70-6,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:7.8W, RoHS Compliant: Yes	0	1:$0.2400 3000:$0.2390 6000:$0.2270 12000:$0.2010
SIA923EDJ-T1-GE3 DISTI # 04X9741	Vishay Intertechnologies	MOSFET, DUAL P CHANNEL, -20V, POWERPAK SC70-6,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.4690 10:$0.4540 100:$0.3580 250:$0.3410 500:$0.3180 1000:$0.2550
SIA923EDJ-T1-GE3 DISTI # 70616555	Vishay Siliconix	SIA923EDJ-T1-GE3 Dual P-channel MOSFET Transistor,4.5 A,20 V,6-Pin SC-70 RoHS: Compliant	0	300:$0.4200 600:$0.3600 1500:$0.2900 3000:$0.2800
SIA923EDJ-T1-GE3 DISTI # 781-SIA923EDJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	16480	1:$0.6500 10:$0.5170 100:$0.3930 500:$0.3240 1000:$0.2600 3000:$0.2350 6000:$0.2190 9000:$0.2110
SIA923EDJ-T1-GE3 DISTI # 8141244P	Vishay Intertechnologies	TRANS MOSFET P-CH 20V 4.5A, RL	5880	100:£0.3040
SIA923EDJ-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	Americas -
SIA923EDJ-T1-GE3 DISTI # XSFP00000094029	Vishay Siliconix	RoHS: Compliant	44418	3000:$0.5500 44418:$0.5000
SIA923EDJ-T1-GE3 DISTI # C1S803602100457	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	6000	6000:$0.2900

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIA923EDJ-T4-GE3 OMO.#: OMO-SIA923EDJ-T4-GE3	MOSFET -20V Vds 8V Vgs PowerPAK SC-70
	Mfr.#: SIA923EDJ-T1-GE3 OMO.#: OMO-SIA923EDJ-T1-GE3	MOSFET -20V Vds 8V Vgs PowerPAK SC-70
	Mfr.#: SIA923EDJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA923EDJ-T1-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SIA923EDJ-T1-GE3 OMO.#: OMO-SIA923EDJ-T1-GE3-VISHAY	MOSFET 2P-CH 20V 4.5A SC-70-6
	Mfr.#: SIA923EDJ-T1-GE3CT OMO.#: OMO-SIA923EDJ-T1-GE3CT-1190	Neu und Original
	Mfr.#: SIA923EDJ-TI-GE3 OMO.#: OMO-SIA923EDJ-TI-GE3-1190	Neu und Original
	Mfr.#: SIA923EDJ-T4-GE3 OMO.#: OMO-SIA923EDJ-T4-GE3-VISHAY	MOSFET P-CH 20V SC-70-6

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SIA923EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,31 $~~; ~~0,31 $~~

10: ~~0,29 $~~; ~~2,95 $~~

100: ~~0,28 $~~; ~~27,93 $~~

500: ~~0,26 $~~; ~~131,90 $~~

1000: ~~0,25 $~~; ~~248,30 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIA923EDJ-T1 3
SIA923E 5
SIA923 6
SIA92 17
SIA9 60
SIA 347

SIA923EDJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes