SIA923E

SIA923EDJ-T1-GE3 vs SIA923EDJ-T1-GE3-CUT TAPE vs SIA923EDJ-T1-GE3CT

 
PartNumberSIA923EDJ-T1-GE3SIA923EDJ-T1-GE3-CUT TAPESIA923EDJ-T1-GE3CT
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK SC-70
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SC70-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance44 mOhms, 44 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge25 nC, 25 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation7.8 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height0.75 mm--
Length2.05 mm--
SeriesSIA--
Transistor Type2 P-Channel--
Width2.05 mm--
BrandVishay / Siliconix--
Forward Transconductance Min11 S, 11 S--
Fall Time10 ns, 10 ns--
Product TypeMOSFET--
Rise Time16 ns, 16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns, 30 ns--
Typical Turn On Delay Time15 ns, 15 ns--
Part # AliasesSIA923EDJ-GE3--
Unit Weight0.000988 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIA923EDJ-T4-GE3 MOSFET -20V Vds 8V Vgs PowerPAK SC-70
SIA923EDJ-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK SC-70
SIA923EDJ-T1-GE3-CUT TAPE Neu und Original
SIA923EDJ-T1-GE3CT Neu und Original
SIA923EDJ-TI-GE3 Neu und Original
Vishay
Vishay
SIA923EDJ-T1-GE3 MOSFET 2P-CH 20V 4.5A SC-70-6
SIA923EDJ-T4-GE3 MOSFET P-CH 20V SC-70-6
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