DZT853-13

Mfr. #:: DZT853-13
Hersteller:: Diodes Incorporated
Beschreibung:: Bipolar Transistors - BJT 1W 100V 6A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: DZT853-13 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DZT853-13 Datasheet DZT853-13 Datasheet (P4)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Eingebaute Dioden

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: SOT-223-4

Polarität des Transistors:: NPN

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 100 V

Kollektor- Basisspannung VCBO:: 200 V

Emitter- Basisspannung VEBO:: 6 V

Kollektor-Emitter-Sättigungsspannung:: 340 mV

Maximaler DC-Kollektorstrom:: 6 A

Bandbreitenprodukt fT gewinnen:: 130 MHz

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: DZT853

DC-Stromverstärkung hFE Max:: 300

Höhe:: 1.65 mm

Länge:: 6.7 mm

Verpackung:: Spule

Breite:: 3.7 mm

Marke:: Eingebaute Dioden

Kontinuierlicher Kollektorstrom:: 6 A

Pd - Verlustleistung:: 3 W

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 2500

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.003951 oz

Tags: DZT853, DZT8, DZT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DZT853-13 Beschreibung

***ure Electronics: DZT853 Series 100 V 6 A 1 W NPN Surface Mount Transistor - SOT-223

***ical: Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R

***el Electronic: Bipolar Transistors - BJT 1W 100V 6A

***ark: Pwr Low Sat Transistor Sot223 T&r 2.5K

***ure Electronics: ZXTN2011G Series 100 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-223

***C: Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R

***(Formerly Allied Electronics): 100V NPN Low Saturat. Transistor SOT-223

***ure Electronics: FZT1053A Series NPN 4.5 A 75 V SMT Silicon Medium Power Transistor - SOT-223

***C: Trans GP BJT NPN 75V 4.5A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 75V 4.5A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 75V 4.5A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 75V 4.5A 4-Pin(3+Tab) SOT-223 T/R Trans GP BJT NPN 75V 4.5A 4-Pin(3+Tab) SOT-223

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 4.5A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

***nell: TRANSISTOR, NPN, REEL 1K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 75V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 2.5W; DC Collector Current: 4.5A; DC Current Gain hFE: 450hFE; Transistor Case

***ment14 APAC: TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:75V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:2.5W; DC Collector Current:4.5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:440mV; Continuous Collector Current Ic Max:4.5A; Current Ic @ Vce Sat:4.5A; Current Ic Continuous a Max:4.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:140MHz; Hfe Min:300; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:2.5W; Power Dissipation Ptot Max:2.5W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT1053A; Tape Width:12mm; Termination Type:SMD; Voltage Vcbo:150V

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

*** Source Electronics: Trans GP BJT NPN 100V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 100V 1A SOT-223

***ure Electronics: FZT493 Series NPN 1 A 100 V SMT Silicon Medium Power Transistor - SOT-223

***ure Electronics: NZT Series NPN 1000 mW 110 V 1.5 A Surface Mount Darlington Transistor - SOT-223

*** Stop Electro: Small Signal Bipolar Transistor, 1.5A I(C), 110V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Darlington NPN 110V 1.5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***nell: TRANSISTOR, NPN, 110V, 1.5A, SOT-223-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 110V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 200hFE; Tr

***ure Electronics: PZTA29 Series NPN 1 W 100 V 800 mA Surface Mount Darlington Transistor - SOT-223

***ark: Transistor,bjt,darlington,npn,800Ma I(C),sot-223 Rohs Compliant: Yes

***r Electronics: Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Darlington NPN 100V 0.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***ure Electronics: PZTA28 Series 1 W 80 V 0.8 A Surface Mount NPN Darlington Transistor - SOT-223

***r Electronics: Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Darlington NPN 80V 0.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***enic: 80V 1W 800mA 10000@10mA5V 125MHz 1.5V@100mA100Ã×A NPN -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS

***rchild Semiconductor: NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

***ark: Transistor; Transistor Type:Darlington; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:80V; Collector Emitter Saturation Voltage, Vce(sat):1.2V; Power Dissipation, Pd:1000mW; DC Current Gain Min (hfe):10000 ;RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
DZT853-13 DISTI # V72:2272_06702888	Zetex / Diodes Inc	Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	4085	3000:$0.2163 1000:$0.2548 500:$0.2572 250:$0.2859 100:$0.3177 25:$0.4403 10:$0.5381 1:$0.6483
DZT853-13 DISTI # V36:1790_06702888	Zetex / Diodes Inc	Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	0
DZT853-13 DISTI # DZT853DICT-ND	Diodes Incorporated	TRANS NPN 100V 6A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6427In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
DZT853-13 DISTI # DZT853DIDKR-ND	Diodes Incorporated	TRANS NPN 100V 6A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6427In Stock	1000:$0.2769 500:$0.3461 100:$0.4378 10:$0.5710 1:$0.6500
DZT853-13 DISTI # DZT853DITR-ND	Diodes Incorporated	TRANS NPN 100V 6A SOT223 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	12500:$0.2240 5000:$0.2268 2500:$0.2436
DZT853-13 DISTI # 30209729	Zetex / Diodes Inc	Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	4085	3000:$0.2325 1000:$0.2739 500:$0.2765 250:$0.3073 100:$0.3415 42:$0.4733
DZT853-13 DISTI # DZT853-13	Diodes Incorporated	Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: DZT853-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 80000	25000:$0.1399 15000:$0.1429 10000:$0.1499 5000:$0.1569 2500:$0.1649
DZT853-13 DISTI # DZT853-13	Diodes Incorporated	Trans GP BJT NPN 100V 6A 4-Pin(3+Tab) SOT-223 T/R (Alt: DZT853-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.1519 15000:€0.1589 10000:€0.1609 5000:€0.1639 2500:€0.1719
DZT853-13 DISTI # 621-DZT853-13	Diodes Incorporated	Bipolar Transistors - BJT 1W 100V 6A RoHS: Compliant	6233	1:$0.6000 10:$0.4960 100:$0.3200 1000:$0.2560
DZT853-13 DISTI # XSFP00000166374	Diodes Incorporated	DZT853 Series 100 V 6 A 1 W NPNSurfaceMountTransistor - SOT-223 RoHS: Compliant	5000 in Stock0 on Order	5000:$0.3636 2500:$0.4000

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	Mfr.#: BLM41PG102SN1L OMO.#: OMO-BLM41PG102SN1L	Ferrite Beads 1806 1K OHM
	Mfr.#: LM2903DGKR OMO.#: OMO-LM2903DGKR-TEXAS-INSTRUMENTS	Analog Comparators Dual Differential Comparato
	Mfr.#: LM7322MAX/NOPB OMO.#: OMO-LM7322MAX-NOPB-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Dual Ch RRIO Hi Output Crnt Op Amp
	Mfr.#: BLM41PG102SN1L OMO.#: OMO-BLM41PG102SN1L-MURATA-ELECTRONICS	EMI Filter Beads, Chips & Arrays 1806 1K OHM
	Mfr.#: CPF0603F32R4C1 OMO.#: OMO-CPF0603F32R4C1-TE-CONNECTIVITY-AMP	Thin Film Resistors - SMD CPF 0603 32R4 1% 50PPM 1K RL

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von DZT853-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,60 $~~; ~~0,60 $~~

10: ~~0,50 $~~; ~~4,96 $~~

100: ~~0,32 $~~; ~~32,00 $~~

1000: ~~0,26 $~~; ~~256,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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DZT853-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes