DZT8

DZT851-13 vs DZT851 vs DZT85113

 
PartNumberDZT851-13DZT851DZT85113
DescriptionBipolar Transistors - BJT 1W 60V 6A
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO150 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage375 mV--
Maximum DC Collector Current6 A--
Gain Bandwidth Product fT130 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDZT851--
DC Current Gain hFE Max300--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current6 A--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DZT853-13 Bipolar Transistors - BJT 1W 100V 6A
DZT851-13 Bipolar Transistors - BJT 1W 60V 6A
DZT851 Neu und Original
DZT85113 Neu und Original
DZT853 Neu und Original
DZT853-13-F Neu und Original
DZT851-13 Bipolar Transistors - BJT 1W 60V 6A
DZT853-13 Bipolar Transistors - BJT 1W 100V 6A
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