SIHG22N60S-E3

SIHG22N60S-E3
Mfr. #:
SIHG22N60S-E3
Hersteller:
Vishay Siliconix
Beschreibung:
IGBT Transistors MOSFET 600V N-Channel Superjunction TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHG22N60S-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
E
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
250 W
Abfallzeit
59 ns
Anstiegszeit
68 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
22 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Widerstand
160 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
77 ns
Typische-Einschaltverzögerungszeit
24 ns
Qg-Gate-Ladung
75 nC
Vorwärts-Transkonduktanz-Min
9.4 S
Tags
SIHG22N60S-E, SIHG22N60S, SIHG22N60, SIHG22N6, SIHG22, SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
S-Series N-Channel 600 V 0.19 O 75 nC Flange Mount Power Mosfet - TO-247AC
***et
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247AC
***ment14 APAC
MOSFET, N CH, 600V, 22A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Teil # Mfg. Beschreibung Aktie Preis
SIHG22N60S-E3
DISTI # V36:1790_14140836
Vishay IntertechnologiesN-CHANNEL 600V
RoHS: Compliant
500
  • 25:$4.2650
  • 10:$4.6390
  • 1:$5.0870
SIHG22N60S-E3
DISTI # 31051235
Vishay IntertechnologiesN-CHANNEL 600V
RoHS: Compliant
500
  • 25:$4.2650
  • 10:$4.5730
  • 3:$5.0210
SIHG22N60S-E3
DISTI # 74R0208
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 22A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    SIHG22N60S-E3
    DISTI # 781-SIHG22N60S-E3
    Vishay IntertechnologiesMOSFET 600V Vds 20V Vgs TO-247AC
    RoHS: Compliant
    0
      SIHG22N60S-E3
      DISTI # C1S806001174256
      Vishay IntertechnologiesMOSFETs
      RoHS: Compliant
      500
      • 100:$3.8170
      • 25:$4.0330
      • 10:$4.3970
      • 1:$4.8520
      Bild Teil # Beschreibung
      SIHG22N60AEL-GE3

      Mfr.#: SIHG22N60AEL-GE3

      OMO.#: OMO-SIHG22N60AEL-GE3

      MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3

      MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60EF-GE3

      Mfr.#: SIHG22N60EF-GE3

      OMO.#: OMO-SIHG22N60EF-GE3

      MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
      SIHG22N65E-GE3

      Mfr.#: SIHG22N65E-GE3

      OMO.#: OMO-SIHG22N65E-GE3-VISHAY

      IGBT Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
      SIHG22N50D-GE3

      Mfr.#: SIHG22N50D-GE3

      OMO.#: OMO-SIHG22N50D-GE3-VISHAY

      IGBT Transistors MOSFET 500V 230mOhm@10V 22A N-Ch D-SRS
      SIHG22N60AEL-GE3

      Mfr.#: SIHG22N60AEL-GE3

      OMO.#: OMO-SIHG22N60AEL-GE3-VISHAY

      MOSFET N-CHAN 600V
      SIHG22N50D

      Mfr.#: SIHG22N50D

      OMO.#: OMO-SIHG22N50D-1190

      Neu und Original
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3-VISHAY

      MOSFET N-CH 500V 22A TO-247AC
      SIHG22N50DGE3

      Mfr.#: SIHG22N50DGE3

      OMO.#: OMO-SIHG22N50DGE3-1190

      Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      SIHG22N60S-E3/G22N60S

      Mfr.#: SIHG22N60S-E3/G22N60S

      OMO.#: OMO-SIHG22N60S-E3-G22N60S-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von SIHG22N60S-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,73 $
      5,73 $
      10
      5,44 $
      54,39 $
      100
      5,15 $
      515,30 $
      500
      4,87 $
      2 433,35 $
      1000
      4,58 $
      4 580,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • A6211 LED Driver
        Allegro's A6211 device integrates a high-side N-channel MOSFET switch for DC-to-DC stepdown (buck) conversion with a wide input supply voltage from 6 to 48 V.
      • WP-SMRT REDCUBE SMT Terminal
        Wurth Electronics' REDCUBE portfolio has been extended with a reverse-type surface-mount terminal with internal through-hole.
      • Compare SIHG22N60S-E3
        SIHG22N60SE3 vs SIHG22N60SE322N60 vs SIHG22N60SE3G22N60S
      • JCH Series DC-DC Converters
        XP Power's JCH Series of DC-DC Converters are aimed for a broad range of telecom, networking, and industrial applications.
      • DDR3 SDRAM with ECC
        ISSI offers its IS46TR16640ED, 1-Gbit DDR3 DRAMs that has an embedded error correcting code (ECC), which detects and corrects bit errors on-the-fly.
      • SCALE-iDriver™ Gate Driver ICs
        Power Integrations' SCALE-iDriver family of gate driver ICs are single-channel IGBT and MOSFET drivers in a standard eSOP package.
      Top