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| PartNumber | SIHG22N60S-E3 | SIHG22N60S-E3,22N60 | SIHG22N60S-E3/G22N60S |
| Description | IGBT Transistors MOSFET 600V N-Channel Superjunction TO-247 | ||
| Manufacturer | VISHAY | - | - |
| Product Category | FETs - Single | - | - |
| Series | E | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | TO-247-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Fall Time | 59 ns | - | - |
| Rise Time | 68 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 22 A | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Rds On Drain Source Resistance | 160 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 77 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Qg Gate Charge | 75 nC | - | - |
| Forward Transconductance Min | 9.4 S | - | - |