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IRFS820B

IRFS820B
Mfr. #:
IRFS820B
Hersteller:
Rochester Electronics, LLC
Beschreibung:
MOSFET 500V N-Channel B-FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS820B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRFS820B, IRFS820, IRFS82, IRFS8, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
N-CH/500V/2.1A/3 Ohm/substitute Of IRFS820 & IRFS820A
***i-Key
N-CHANNEL POWER MOSFET
***ser
MOSFETs 500V N-Channel B-FET
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 500 V 1.4 Ohm 8.2 nC OptiMOS™ Power Mosfet - DPAK
*** Stop Electro
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***i-Key
MOSFET N-CH 200V 2.8A TO-220F
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***emi
N-Channel QFET® MOSFET 200V, 3A, 1.4Ω
***ure Electronics
N-Channel 200 V 1.4 Ohm Surface Mount Mosfet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 250 V, 3 A, 1.75 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Single N-Channel Power MOSFET 250V, 3A, 2.4Ω
***el Electronic
SKYWORKS SOLUTIONS - AS179-92LF - RF Switch IC, SPDT, 20 MHz to 3 GHz, 2 V to 5 V, SC-70-6
***ark
NCH 250V 3A TP-FA(DPAK) / REEL ROHS COMPLIANT: YES
***r Electronics
Small Signal Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***enic
250V 3A 1.8´Î@10V1.5A 26W 4.5V@1mA 7pF@20V N Channel 210pF@20V 4.2nC@10V -55¡Í~+150¡Í@(Tj) DAPK MOSFETs ROHS
*** Source Electronics
MOSFET N-CH 250V 3A DPAK
***ser
MOSFETs 250V N-Channel QFET
Teil # Mfg. Beschreibung Aktie Preis
IRFS820B
DISTI # 512-IRFS820B		ON SemiconductorMOSFET 500V N-Channel B-FET
RoHS: Compliant		0
    IRFS820BT
    DISTI # 512-IRFS820BT    		ON SemiconductorMOSFET 500V N-Channel B-FET
    RoHS: Compliant    		0
      IRFS820BFairchild Semiconductor CorporationPower Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		4853
      • 1000:$0.1700
      • 500:$0.1800
      • 100:$0.1900
      • 25:$0.2000
      • 1:$0.2100
      Bild Teil # Beschreibung
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      IRFS59N10DTRLP-CUT TAPE

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      		 Neu und Original
      IRFSL11N50A FSL11N50A

      Mfr.#: IRFSL11N50A FSL11N50A

      OMO.#: OMO-IRFSL11N50A-FSL11N50A-1190

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      Mfr.#: IRFS7437-7PPBF

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      Mfr.#: IRFS3306 FS3306

      OMO.#: OMO-IRFS3306-FS3306-1190

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      Mfr.#: IRFS740B,IRFS730A,IRFS63

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      IRFS4321TRRPBF

      Mfr.#: IRFS4321TRRPBF

      OMO.#: OMO-IRFS4321TRRPBF-INFINEON-TECHNOLOGIES

      		 RF Bipolar Transistors MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC
      IRFS9N60A

      Mfr.#: IRFS9N60A

      OMO.#: OMO-IRFS9N60A-VISHAY

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von IRFS820B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,26 $
      0,26 $
      10
      0,24 $
      2,42 $
      100
      0,23 $
      22,95 $
      500
      0,22 $
      108,40 $
      1000
      0,20 $
      204,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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