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NSBA123JDXV6T1G

NSBA123JDXV6T1G
Mfr. #:
NSBA123JDXV6T1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NSBA123JDXV6T1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA123JDXV6T1G DatasheetNSBA123JDXV6T1G Datasheet (P4-P6)NSBA123JDXV6T1G Datasheet (P7-P9)NSBA123JDXV6T1G Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Dual
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
2.2 kOhms
Typisches Widerstandsverhältnis:
0.047
Montageart:
SMD/SMT
Paket / Koffer:
SOT-563-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
- 0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
357 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
80
Höhe:
0.55 mm
Länge:
1.6 mm
Breite:
1.2 mm
Marke:
ON Semiconductor
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
4000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000106 oz
Tags
NSBA123JDX, NSBA123JD, NSBA123J, NSBA123, NSBA12, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
NSBA123JDXV6T1G
DISTI # NSBA123JDXV6T1GOSTR-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    NSBA123JDXV6T1G
    DISTI # NSBA123JDXV6T1GOSCT-ND    		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NSBA123JDXV6T1G
      DISTI # 863-NSBA123JDXV6T1G      		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
      RoHS: Compliant      		0
        NSBA123JDXV6T1GON SemiconductorSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
        RoHS: Compliant        		283000
        • 100:$0.0400
        • 500:$0.0400
        • 1000:$0.0400
        • 1:$0.0500
        • 25:$0.0500
        Bild Teil # Beschreibung
        NSBA123EDXV6T1G

        Mfr.#: NSBA123EDXV6T1G

        OMO.#: OMO-NSBA123EDXV6T1G

        		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
        NSBA123JDP6T5G

        Mfr.#: NSBA123JDP6T5G

        OMO.#: OMO-NSBA123JDP6T5G

        		 Bipolar Transistors - Pre-Biased DUAL PBRT
        NSBA123TDP6T5G

        Mfr.#: NSBA123TDP6T5G

        OMO.#: OMO-NSBA123TDP6T5G

        		 Bipolar Transistors - Pre-Biased DUAL PBRT
        NSBA123JDXV6T1G

        Mfr.#: NSBA123JDXV6T1G

        OMO.#: OMO-NSBA123JDXV6T1G

        		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
        NSBA123EDXV6T1G

        Mfr.#: NSBA123EDXV6T1G

        OMO.#: OMO-NSBA123EDXV6T1G-ON-SEMICONDUCTOR

        		 TRANS 2PNP PREBIAS 0.5W SOT563
        NSBA123JDXV6T1

        Mfr.#: NSBA123JDXV6T1

        OMO.#: OMO-NSBA123JDXV6T1-ON-SEMICONDUCTOR

        		 TRANS 2PNP PREBIAS 0.5W SOT563
        NSBA123JDXV6T1G

        Mfr.#: NSBA123JDXV6T1G

        OMO.#: OMO-NSBA123JDXV6T1G-ON-SEMICONDUCTOR

        		 TRANS 2PNP PREBIAS 0.5W SOT563
        NSBA123JDXV6T5

        Mfr.#: NSBA123JDXV6T5

        OMO.#: OMO-NSBA123JDXV6T5-1190

        		 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
        NSBA123JF3T5G

        Mfr.#: NSBA123JF3T5G

        OMO.#: OMO-NSBA123JF3T5G-ON-SEMICONDUCTOR

        		 Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
        NSBA123JDP6T5G

        Mfr.#: NSBA123JDP6T5G

        OMO.#: OMO-NSBA123JDP6T5G-ON-SEMICONDUCTOR

        		 Bipolar Transistors - Pre-Biased DUAL PBRT
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von NSBA123JDXV6T1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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