IPB020N10N5LFATMA1

IPB020N10N5LFATMA1
Mfr. #:
IPB020N10N5LFATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V D2PAK-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB020N10N5LFATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPB020N1, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
MOSFET OptiMOS 5 Linear FET, 100V Feat
***i-Key
MOSFET N-CH 100V D2PAK-3
***ronik
N-CH 100V 120A 1,8mOhm D2PAK
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 100V, 120A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 100V, 120A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IPB020N10N5LFATMA1
DISTI # 31951654
Infineon Technologies AGDIFFERENTIATED MOSFETS1000
  • 1000:$3.8004
IPB020N10N5LFATMA1
DISTI # IPB020N10N5LFATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V D2PAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
978In Stock
  • 500:$4.6815
  • 100:$5.5876
  • 10:$6.7960
  • 1:$7.5500
IPB020N10N5LFATMA1
DISTI # IPB020N10N5LFATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V D2PAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
978In Stock
  • 500:$4.6815
  • 100:$5.5876
  • 10:$6.7960
  • 1:$7.5500
IPB020N10N5LFATMA1
DISTI # IPB020N10N5LFATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V D2PAK-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$3.9587
IPB020N10N5LFATMA1
DISTI # V36:1790_17076744
Infineon Technologies AGDIFFERENTIATED MOSFETS0
    IPB020N10N5LFATMA1
    DISTI # IPB020N10N5LFATMA1
    Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB020N10N5LFATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$3.7900
    • 2000:$3.6900
    • 4000:$3.4900
    • 6000:$3.3900
    • 10000:$3.2900
    IPB020N10N5LFATMA1
    DISTI # SP001503854
    Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503854)
    RoHS: Compliant
    Min Qty: 1000
    Europe - 0
    • 1000:€3.5900
    • 2000:€3.3900
    • 4000:€3.2900
    • 6000:€3.0900
    • 10000:€2.8900
    IPB020N10N5LFATMA1
    DISTI # 93AC7098
    Infineon Technologies AGMOSFET, N-CH, 100V, 120A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes685
    • 500:$3.3000
    • 250:$3.6200
    • 100:$3.7900
    • 50:$4.0800
    • 25:$4.3700
    • 10:$4.5800
    • 1:$5.0700
    IPB020N10N5LFATMA1
    DISTI # 726-IPB020N10N5LFATM
    Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant
    48
    • 1:$6.3400
    • 10:$5.7300
    • 25:$5.4600
    • 100:$4.7400
    • 250:$4.5300
    • 500:$4.1300
    • 1000:$3.6000
    • 2000:$3.4600
    IPB020N10N5LFATMA1
    DISTI # 2986456
    Infineon Technologies AGMOSFET, N-CH, 100V, 120A, 313W, TO-263
    RoHS: Compliant
    685
    • 1000:$5.1400
    • 500:$5.8800
    • 250:$6.4800
    • 100:$6.8300
    • 10:$7.8000
    • 1:$9.9200
    IPB020N10N5LFATMA1
    DISTI # 2986456
    Infineon Technologies AGMOSFET, N-CH, 100V, 120A, 313W, TO-263
    RoHS: Compliant
    685
    • 500:£3.4100
    • 250:£3.8900
    • 100:£4.1000
    • 10:£4.7400
    • 1:£6.1800
    Bild Teil # Beschreibung
    IPB020N10N5LFATMA1

    Mfr.#: IPB020N10N5LFATMA1

    OMO.#: OMO-IPB020N10N5LFATMA1

    MOSFET DIFFERENTIATED MOSFETS
    IPB020N10N5

    Mfr.#: IPB020N10N5

    OMO.#: OMO-IPB020N10N5

    MOSFET N-Ch 100V 120A D2PAK-2
    IPB020N10N5ATMA1

    Mfr.#: IPB020N10N5ATMA1

    OMO.#: OMO-IPB020N10N5ATMA1

    MOSFET N-Ch 100V 120A D2PAK-2
    IPB020N10N5LFATMA1

    Mfr.#: IPB020N10N5LFATMA1

    OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V D2PAK-3
    IPB020N10N5

    Mfr.#: IPB020N10N5

    OMO.#: OMO-IPB020N10N5-1190

    Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263
    IPB020N10N5LF

    Mfr.#: IPB020N10N5LF

    OMO.#: OMO-IPB020N10N5LF-1190

    SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF)
    IPB020N10N5ATMA1

    Mfr.#: IPB020N10N5ATMA1

    OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

    IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IPB020N10N5LFATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,93 $
    4,93 $
    10
    4,68 $
    46,80 $
    100
    4,43 $
    443,35 $
    500
    4,19 $
    2 093,60 $
    1000
    3,94 $
    3 940,90 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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