 |  | | |
| PartNumber | IPB020N10N5LFATMA1 | IPB020N10N5 | IPB020N10N5ATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 100V 120A D2PAK-2 | MOSFET N-Ch 100V 120A D2PAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | D2PAK-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 120 A | 120 A | 120 A |
| Rds On Drain Source Resistance | 1.7 mOhms | 1.7 mOhms | 1.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 210 nC | 210 nC | 210 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 375 W | 375 W | 375 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 124 S | 124 S | 124 S |
| Fall Time | 29 ns | 29 ns | 29 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 26 ns | 26 ns | 26 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 77 ns | 77 ns | 77 ns |
| Typical Turn On Delay Time | 33 ns | 33 ns | 33 ns |
| Part # Aliases | IPB020N10N5LF SP001503854 | IPB020N10N5ATMA1 SP001132558 | IPB020N10N5 SP001132558 |
| Height | - | 4.4 mm | 4.4 mm |
| Length | - | 10 mm | 10 mm |
| Width | - | 9.25 mm | 9.25 mm |
| Unit Weight | - | 0.068654 oz | 0.139332 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB020N10N5LFATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPB020N10N5 | MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB020N10N5ATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB020N10N5LFATMA1 | MOSFET N-CH 100V D2PAK-3 | ||
| IPB020N10N5ATMA1 | IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB020N10N5 | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263 | ||
| IPB020N10N5LF | SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF) |