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IPS12CN10LG

IPS12CN10LG
Mfr. #:
IPS12CN10LG
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPS12CN10LG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPS12CN10LG, IPS12CN10L, IPS12C, IPS12, IPS1, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPS12CN10LGBKMA1
DISTI # IPS12CN10LGBKMA1-ND		Infineon Technologies AGMOSFET N-CH 100V 69A TO251-3-11
RoHS: Compliant
Min Qty: 1500
Container: Tube		Limited Supply - Call
    IPS12CN10L G
    DISTI # IPS12CN10LG    		Infineon Technologies AGTrans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-251 - Bulk (Alt: IPS12CN10LG)
    RoHS: Not Compliant
    Min Qty: 397
    Container: Bulk    		Americas - 0
    • 3970:$0.7999
    • 1985:$0.8149
    • 1191:$0.8429
    • 794:$0.8749
    • 397:$0.9069
    IPS12CN10L G
    DISTI # 726-IPS12CN10LG    		Infineon Technologies AGMOSFET N-Ch 100V 69A IPAK-3
    RoHS: Compliant    		0
      IPS12CN10LGInfineon Technologies AGPower Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Compliant      		43
      • 1000:$0.8300
      • 500:$0.8700
      • 100:$0.9100
      • 25:$0.9500
      • 1:$1.0200
      Bild Teil # Beschreibung
      IPS12-S4PO50/A2P

      Mfr.#: IPS12-S4PO50/A2P

      OMO.#: OMO-IPS12-S4PO50-A2P-1190

      		 Neu und Original
      IPS125-9

      Mfr.#: IPS125-9

      OMO.#: OMO-IPS125-9-1190

      		 Neu und Original
      IPS12CN10

      Mfr.#: IPS12CN10

      OMO.#: OMO-IPS12CN10-1190

      		 Neu und Original
      IPS12CN10L

      Mfr.#: IPS12CN10L

      OMO.#: OMO-IPS12CN10L-1190

      		 Neu und Original
      IPS12CN10LG

      Mfr.#: IPS12CN10LG

      OMO.#: OMO-IPS12CN10LG-1190

      		 Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      IPS12CN10LGBKMA1

      Mfr.#: IPS12CN10LGBKMA1

      OMO.#: OMO-IPS12CN10LGBKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 69A TO251-3-11
      IPS12N03LBG

      Mfr.#: IPS12N03LBG

      OMO.#: OMO-IPS12N03LBG-1190

      		 Neu und Original
      IPS12CN10L G

      Mfr.#: IPS12CN10L G

      OMO.#: OMO-IPS12CN10L-G-126

      		 IGBT Transistors MOSFET N-Ch 100V 69A IPAK-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von IPS12CN10LG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,24 $
      1,24 $
      10
      1,18 $
      11,83 $
      100
      1,12 $
      112,05 $
      500
      1,06 $
      529,15 $
      1000
      1,00 $
      996,00 $
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