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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPS12CN10LGBKMA1 DISTI # IPS12CN10LGBKMA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 69A TO251-3-11 RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
| IPS12CN10L G DISTI # IPS12CN10LG | Infineon Technologies AG | Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-251 - Bulk (Alt: IPS12CN10LG) RoHS: Not Compliant Min Qty: 397 Container: Bulk | Americas - 0 |
|
| IPS12CN10L G DISTI # 726-IPS12CN10LG | Infineon Technologies AG | MOSFET N-Ch 100V 69A IPAK-3 RoHS: Compliant | 0 | |
| IPS12CN10LG | Infineon Technologies AG | Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant | 43 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: IPS12-S4PO50/A2P OMO.#: OMO-IPS12-S4PO50-A2P-1190 |
Neu und Original |
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Mfr.#: IPS125-9 OMO.#: OMO-IPS125-9-1190 |
Neu und Original |
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Mfr.#: IPS12CN10 OMO.#: OMO-IPS12CN10-1190 |
Neu und Original |
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Mfr.#: IPS12CN10L OMO.#: OMO-IPS12CN10L-1190 |
Neu und Original |
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Mfr.#: IPS12CN10LG OMO.#: OMO-IPS12CN10LG-1190 |
Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
Mfr.#: IPS12CN10LGBKMA1 |
MOSFET N-CH 100V 69A TO251-3-11 |
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Mfr.#: IPS12N03LBG OMO.#: OMO-IPS12N03LBG-1190 |
Neu und Original |
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Mfr.#: IPS12CN10L G OMO.#: OMO-IPS12CN10L-G-126 |
IGBT Transistors MOSFET N-Ch 100V 69A IPAK-3 |