OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI2333DS-T1-GE3

SI2333DS-T1-GE3
Mfr. #:
SI2333DS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 12V 4.1A SOT23-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2333DS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI2333DS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI2333DS-T, SI2333DS, SI2333D, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
***i-Key
MOSFET P-CH 12V 4.1A SOT23-3
***
P-CHANNEL 12-V (D-S) MOSFET
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.1A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:750mW
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2333DS-T1-GE3
DISTI # V36:1790_09216809		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.3409
  • 1500000:$0.3410
  • 300000:$0.3506
  • 30000:$0.3652
  • 3000:$0.3675
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5850In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5850In Stock
  • 1000:$0.4056
  • 500:$0.5137
  • 100:$0.6219
  • 10:$0.7980
  • 1:$0.8900
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 4.1A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.3325
  • 15000:$0.3360
  • 6000:$0.3491
  • 3000:$0.3675
SI2333DS-T1-GE3
DISTI # SI2333DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2333DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.3199
  • 18000:$0.3289
  • 12000:$0.3379
  • 6000:$0.3529
  • 3000:$0.3629
SI2333DS-T1-GE3
DISTI # 84R8032		Vishay IntertechnologiesTrans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 84R8032)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.4690
  • 500:$0.5950
  • 250:$0.6440
  • 100:$0.6910
  • 50:$0.7960
  • 25:$0.9010
  • 1:$1.1000
SI2333DS-T1-GE3
DISTI # 15R4914		Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):25mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs Typ:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes0
  • 10000:$0.3180
  • 6000:$0.3250
  • 4000:$0.3380
  • 2000:$0.3750
  • 1000:$0.4130
  • 1:$0.4300
SI2333DS-T1-GE3
DISTI # 84R8032		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:750mW RoHS Compliant: Yes1670
  • 1000:$0.4740
  • 500:$0.6010
  • 250:$0.6500
  • 100:$0.6990
  • 50:$0.8040
  • 25:$0.9100
  • 1:$1.1000
SI2333DS-T1-GE3
DISTI # 781-SI2333DS-GE3		Vishay IntertechnologiesMOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
RoHS: Compliant		4820
  • 1:$0.8700
  • 10:$0.7200
  • 100:$0.5520
  • 500:$0.4750
  • 1000:$0.3740
  • 3000:$0.3490
  • 6000:$0.3320
  • 9000:$0.3250
SI2333DS-T1-GE3Vishay IntertechnologiesMOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
RoHS: Compliant		Americas -
    SI2333DS-T1-GE3
    DISTI # 1867182    		Vishay IntertechnologiesP CH MOSFET
    RoHS: Compliant    		1260
    • 250:£0.5890
    • 100:£0.6330
    • 50:£0.7280
    • 25:£0.8250
    • 1:£0.9960
    SI2333DS-T1-GE3
    DISTI # 1867182    		Vishay IntertechnologiesP CHANNEL MOSFET
    RoHS: Compliant    		1670
    • 3000:$0.5540
    • 1000:$0.5650
    • 500:$0.7170
    • 100:$0.8330
    • 10:$1.0900
    • 1:$1.3100
    Bild Teil # Beschreibung
    SI2333DDS-T1-GE3

    Mfr.#: SI2333DDS-T1-GE3

    OMO.#: OMO-SI2333DDS-T1-GE3

    		 MOSFET -12V Vds 8V Vgs SOT-23
    SI2333DS-T1-GE3

    Mfr.#: SI2333DS-T1-GE3

    OMO.#: OMO-SI2333DS-T1-GE3

    		 MOSFET 12V 5.3A 1.25W 32mohm @ 4.5V
    SI2333DS-T1-E3

    Mfr.#: SI2333DS-T1-E3

    OMO.#: OMO-SI2333DS-T1-E3

    		 MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V
    SI2333DDS

    Mfr.#: SI2333DDS

    OMO.#: OMO-SI2333DDS-1190

    		 Neu und Original
    SI2333DDS-T1

    Mfr.#: SI2333DDS-T1

    OMO.#: OMO-SI2333DDS-T1-1190

    		 Neu und Original
    SI2333DDS-T1-GE3

    Mfr.#: SI2333DDS-T1-GE3

    OMO.#: OMO-SI2333DDS-T1-GE3-VISHAY

    		 MOSFET P-CH 12V 6A SOT23
    SI2333DS

    Mfr.#: SI2333DS

    OMO.#: OMO-SI2333DS-1190

    		 MOSFET Transistor, P-Channel, TO-236
    SI2333DS-T1-E3

    Mfr.#: SI2333DS-T1-E3

    OMO.#: OMO-SI2333DS-T1-E3-VISHAY

    		 MOSFET P-CH 12V 4.1A SOT23-3
    SI2333DS-T1-GE3

    Mfr.#: SI2333DS-T1-GE3

    OMO.#: OMO-SI2333DS-T1-GE3-VISHAY

    		 MOSFET P-CH 12V 4.1A SOT23-3
    SI2333DS-T1-E3-CUT TAPE

    Mfr.#: SI2333DS-T1-E3-CUT TAPE

    OMO.#: OMO-SI2333DS-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SI2333DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,48 $
    0,48 $
    10
    0,45 $
    4,53 $
    100
    0,43 $
    42,93 $
    500
    0,41 $
    202,75 $
    1000
    0,38 $
    381,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Top